Technical Data Sheet
5mm Infrared LED, T-1 3/4
SIR333-A
Features
․High
reliability
․2.54mm
lead spacing
․Low
forward voltage
․Good
spectral matching
to Si photodetector
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
EVERLIGHT’s infrared emitting
diode (SIR333-A) is a high intensity
diode, molded in a blue transparent
plastic package.
The device is spectrally matched
with phototransistor, photodiode and
infrared receiver module.
Applications
․Free
air transmission system
․Optoelectronic
switch
․Floppy
disk drive
․Infrared
applied system
․Smoke
detector
Device Selection Guide
LED Part No.
SIR
Chip
Material
GaAlAs
Lens Color
Blue
Everlight Electronics Co., Ltd.
Device No：DIS-033-082
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 1 of 7
Prepared by：Jaine Tsai
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
I
F
I
FP
V
R
T
opr
T
stg
T
sol
P
d
Rating
100
1.0
5
-40 ~ +85
-40 ~ +85
260
150
Units
mA
A
V
℃
℃
℃
mW
Notes:
*1:I
FP
Conditions--Pulse Width≦100μs and Duty≦1%.
*2:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DIS-033-082
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 2 of 7
Prepared by：Jaine Tsai
SIR333-A
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Condition
I
F
=20mA
I
F
=100mA
Radiant Intensity
E
e
Pulse Width≦100μs and Duty≦1%
Min.
7.8
--
--
--
--
--
--
--
--
--
Typ. Max.
20
90
900
875
80
1.3
1.4
2.6
--
20
--
--
--
--
--
1.6
1.8
4.0
10
--
Units
mW/sr
I
F
=1A
Pulse Width≦100μs and Duty≦1%
Peak Wavelength
Spectral Bandwidth
λp
Δλ
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=100mA
nm
nm
Forward Voltage
V
F
Pulse Width≦100μs and Duty≦1%
V
I
F
=1A
Pulse Width≦100μs and Duty≦1%
Reverse Current
View Angle
I
R
2θ1/2
V
R
=5V
I
F
=20mA
μA
deg
Everlight Electronics Co., Ltd.
Device No：DIS-033-082
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 3 of 7
Prepared by：Jaine Tsai
SIR333-A
Typical Electro-Optical Characteristics Curves
Fig.1 Forward Current vs.
Ambient Temperature
140
120
100
80
60
40
20
0
Fig.2 Spectral Distributio
n
100
80
60
40
20
0
I
F
=20mA
Ta=25°C
-40 -20 0
20
40
60
80
100
810 835 855 875 905 925 945 965 985
Fig.3 Peak Emission Wavelength
Ambient Temperature
Fig.4 Forward Current
vs. Forward Voltage
920
10
4
900
10
3
875
10
2
860
1
10
84
0
-25
0
25
50
75
100
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：DIS-033-082
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 4 of 7
Prepared by：Jaine Tsai
SIR333-A
Typical Electro-Optical Characteristics Curves
Fig.5 Relative Intensity vs.
Forward Current
Fig.6 Relative Radiant Intensity vs.
Angular Displacement
1000
Ie-Radiant Intensity(mW/sr)
-20
-10
0
10
20
30
100
1.0
0.9
40
50
60
70
80
0.6 0.4 0.2
0
0.2 0.4 0.6
10
0.8
0.7
0
1
2
3
0
10
10
10
10
10
4
I
F
-Forward Current (mA
)
Fig.7 Relative Intensity vs.
Ambient Temperature(°C)
Fig.8 Forward Voltage vs.
Ambient Temperature(°C)
25
Ie-Radiant Intensity (mW/sr)
1.4
20
1.3
I
F
=20mA
I
F
=20mA
15
1.2
10
25
50
75
100
120
1.1
25
50
75
100
120
Everlight Electronics Co., Ltd.
Device No：DIS-033-082
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 5 of 7
Prepared by：Jaine Tsai
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