Technical Data Sheet
0.8mm Height Flat Top Phototransistor
PT19-21C/L41/TR8
Features
․Fast
response time
․High
photo sensitivity
․Small
junction capacitance
․Pb
free
․
The product itself will remain within RoHS compliant version.
Descriptions
․PT19-21C/L41/TR8
is a phototransistor in miniature SMD package
which is molded in a water clear with flat top view lens.
The device is Spectrally matched to visible and infrared emitting
diode.
Applications
․Miniature
switch
․Counters
and sorter
․Position
sensor
․Infrared
applied system
․Encoder
Device Selection Guide
LED Part No.
PT
Chip
Material
Silicon
Lens Color
Water clear
Everlight Electronics Co., Ltd.
Device No：DTT-019-034
http:\\www.everlight.com
Prepared date：07-25-2005
Rev 2
Page: 1 of 10
Prepared by：Jaine Tsai
PT19-21C/L41/TR8
Package Dimensions
Emitter
Collector
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.1mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
T
opr
T
stg
T
sol
P
c
Rating
30
5
20
-25 ~ +85
-40 ~ +85
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DTT-019-034
http:\\www.everlight.com
Prepared date：07-25-2005
Rev 2
Page: 2 of 10
Prepared by：Jaine Tsai
PT19-21C/L41/TR8
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Collector Dark Current
Symbol
λ
0.5
λ
P
BV
CEO
BV
ECO
V
CE(sat)
I
CEO
Condition
---
---
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1m W/cm
2
V
CE
=20V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW /cm
2
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
Min
400
---
30
Typ
---
940
---
Max
1100
---
---
Unit
nm
nm
V
5
---
---
---
---
---
---
0.4
100
V
V
nA
On State Collector Current
Rise Time
Fall Time
I
C(ON)
t
r
t
f
0.3
---
---
0.6
15
15
---
mA
μS
---
Everlight Electronics Co., Ltd.
Device No：DTT-019-034
http:\\www.everlight.com
Prepared date：07-25-2005
Rev 2
Page: 3 of 10
Prepared by：Jaine Tsai
PT19-21C/L41/TR8
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
100 300 500 700 900 1100 1300
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
10
C
1
0.1
0.01
0.001
0.01
0.1
1
2
10
Everlight Electronics Co., Ltd.
Device No：DTT-019-034
http:\\www.everlight.com
Prepared date：07-25-2005
Rev 2
Page: 4 of 10
Prepared by：Jaine Tsai
PT19-21C/L41/TR8
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：DTT-019-034
http:\\www.everlight.com
Prepared date：07-25-2005
Rev 2
Page: 5 of 10
Prepared by：Jaine Tsai
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
