2N3442
2N4347
HIGH POWER INDUSTRIAL TRANSISTORS
NPN silicon transistors designed for applications in industrial and commercial equipment including high
fidelity audio amplifiers, series and shunts regulators and power switches.
•
Low Collector-Emitter Saturation Voltage –
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 2.0 Adc – 2N4347
•
Collector-Emitter Sustaining Voltage-
VCEO(sus) = 120 Vdc (Min) – 2N4347
140 Vdc (Min) – 2N3442
•
Excellent Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CB
V
EB
Ratings
#Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
Value
120
140
140
160
7.0
5.0
10
10
15 (**)
3.0
7.0
8.0
-
100
117
0.57
0.67
-65 to +200
Unit
V
Vdc
Vdc
I
C
Collector Current
Peak
Continuous
Adc
I
B
Base Current
Peak
Total Device Dissipation
@ T
C
= 25°
Derate
above 25°
Junction Temperature
Storage Temperature
Adc
P
D
Watts
W/°C
°C
°C
T
J
T
S
(**) This data guaranteed in addition to JEDEC registered data.
COMSET SEMICONDUCTORS
1/3
2N3442
2N4347
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
2N4347
2N3442
Value
1.75
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
Ratings
Collector-Emitter
Sustaining Voltage (1)
Test Condition(s)
I
C
=200 mAdc, I
B
=0
Min Typ Mx Unit
2N4347
120
2N3442
140
-
-
-
-
-
-
Vdc
-
-
V
-
200
mAdc
200
-
2N4347
10
mAdc
-
2N3442
-
2N4347
2N3442
2N4347
-
15
10
2N3442
20
4.0
2N4347
2N3442
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
5.0
60
-
-
70
-
1.0
2.0
1.0
5.0
mAdc
-
5.0
-
2.0
2N4347
130
2N3442
150
2N4347
2N3442
-
V
CER(SUS)
R
BE
=100Ω
Ω
Collector-Emitter
Sustaining Voltage
I
C
=0.1 Adc
I
C
=0.2 Adc
V
CE
=100 Vdc, I
B
=0
V
CE
=140 Vdc, I
B
=0
V
CE
=125 Vdc, V
EB(off)
=1.5 Vdc
I
CEO
Collector-Emitter Current
I
CEX
Collector Cutoff Current
V
CE
=120 Vdc, V
EB(off)
=1.5 Vdc,
T
C
= 150°C
V
CE
=140 Vdc, V
EB(off)
=1.5 Vdc
V
CE
=140 Vdc, V
EB(off)
=1.5 Vdc,
T
C
= 150°C
I
EBO
Emitter Cutoff Current
V
BE
=7.0 Vdc, I
C
=0
I
C
=2.0 Adc, V
CE
=4.0 Vdc
h
FE
I
C
=5.0 Adc, V
CE
=4.0 Vdc
DC Current Gain
I
C
=3.0 Adc, V
CE
=4.0 Vdc
I
C
=10 Adc, V
CE
=4.0 Vdc
I
C
=2.0 Adc, I
B
=200 mAdc
V
CE(SAT)
Collector-Emitter
saturation Voltage
I
C
=5.0 Adc, I
B
=0.63 Adc
I
C
=3.0 Adc, I
B
=0.3 Adc
I
C
=10 Adc, I
B
=0.2 Adc
Vdc
COMSET SEMICONDUCTORS
2/3
2N3442
2N4347
Symbol
V
BE(on)
Ratings
Base-Emitter Voltage
Test Condition(s)
I
C
=2.0 Adc, V
CE
=4.0 Vdc
I
C
=5.0 Adc, V
CE
=4.0 Vdc
I
C
=3.0 Adc, V
CE
=4.0 Vdc
I
C
=10 Adc, V
CE
=4.0 Vdc
V
CE
=4.0 Vdc, I
C
=0.5 Adc, f=1.0
kHz
V
CE
=4.0 Vdc, I
C
=2.0 Adc, f=1.0
kHz
V
CE
=4.0 Vdc, I
C
=0.5 Adc, f
test
=
50 kHz
V
CE
=4.0 Vdc, I
C
=2.0 Adc, f
test
=
40 kHz
V
CE
=67 Vdc, I
C
=1.5 Adc
V
CE
=78 Vdc, I
C
=1.5 Adc
Min Typ Mx Unit
2N4347
2N3442
2N4347
2N3442
-
-
-
-
40
12
-
-
-
-
-
-
-
-
-
-
2.0
3.0
1.7
5.7
-
-
72
-
kHz
2N3442
2N4347
2N3442
80
1.0
1.0
-
-
s
-
2N4347
200
Vdc
h
fe
Small Signal Current Gain
f
T
Current Gain – Bandwith
Product (2)
Second Breakdown
Collector Current
I
s/b
(1) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
(2)
f
T
= |h
fe
| * f
test
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
ARM技术
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