NTD4860N
Power MOSFET
25 V, 65 A, Single N-Channel, DPAK/IPAK
Features
•
•
•
•
•
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
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V
(BR)DSS
25 V
R
DS(ON)
MAX
7.5 mW @ 10 V
I
D
MAX
65 A
Applications
•
VCORE Applications
•
DC-DC Converters
•
High/Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
25
±20
13
10
2.0
10.4
8.0
1.28
65
50
50
130
45
-55 to
+175
42
6
84.5
W
A
A
°C
A
V/ns
mJ
4
Drain
YWW
48
60NG
W
A
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
W
A
1 2
3
4
Unit
V
V
A
G
11.1 mW @ 4.5 V
D
S
N-CHANNEL MOSFET
4
4
1
2 3
1
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
48
60NG
4
Drain
YWW
48
60NG
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain-to-Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 13 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
2
1 2 3
Drain 3
1
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
Y
WW
4860N
G
= Year
= Work Week
= Device Code
= Pb-Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 0
Publication Order Number:
NTD4860N/D
NTD4860N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction-to-Case (Drain)
Junction-to-TAB (Drain)
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – Steady State (Note 2)
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC-TAB
R
qJA
R
qJA
Value
3
3.5
75
117
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
25
21
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain-to-Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.45
5.2
2.5
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 30 A
6.1
8.9
48
7.5
11.1
mW
S
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
g
FS
V
DS
= 1.5 V, I
D
= 15 A
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
1308
342
169
11
1.2
3.9
4.7
21.8
nC
nC
16.5
pF
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
12.2
20.1
15.2
4.3
7.1
17
22
2.3
ns
ns
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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NTD4860N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.9
0.76
12.7
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
7.0
5.7
3.5
nC
ns
1.2
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
2.49
0.0164
1.88
3.46
0.75
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4860N
TYPICAL PERFORMANCE CURVES
60
10V
I
D
, DRAIN CURRENT (AMPS)
50
40
3.4 V
30
3.2 V
20
3.0 V
10
0
2.8 V
0
1
2
3
4
5
60
I
D
, DRAIN CURRENT (AMPS)
3.8 V
T
J
= 25°C
3.6 V
V
DS
≥
10 V
50
40
30
20
10
0
4V
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
0
1
2
3
4
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
0.012
0.011
0.010
0.009
0.008
0.007
0.006
Figure 2. Transfer Characteristics
0.040
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0.004
0
2
3
4
5
6
7
8
9
10
11
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 11.5 V
0.005
0.004
10
20
30
40
50
60
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
10
-25
0
25
50
75
100
125
150
175
2
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
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NTD4860N
TYPICAL PERFORMANCE CURVES
2000
V
GS
= 0 V
C, CAPACITANCE (pF)
1500
C
iss
T
J
= 25°C
10
Q
T
8
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS)
6
Q
1
Q
2
V
GS
1000
C
oss
500
C
rss
0
0
5
10
15
20
25
4
2
I
D
= 30 A
T
J
= 25°C
0
0
5
10
15
20
25
Q
G
, TOTAL GATE CHARGE (nC)
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (AMPS)
1000
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
t, TIME (ns)
100
t
d(off)
t
r
10
t
d(on)
t
f
V
GS
= 0 V
25
20
15
10
5
0
0.4
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
100
90
80
70
60
50
40
30
20
10
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 13 A
100
10
ms
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
ms
1 ms
10 ms
dc
1
0.1
0.1
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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