Technical Data Sheet
5mm Infrared LED, T-1 3/4
HIR333C/H0
Features
․High
reliability
․High
radiant intensity
․Peak
wavelength
λp=850nm
․2.54mm
Lead spacing
․Low
forward voltage
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
․EVERLIGHT’S
Infrared Emitting Diode(HIR333C/H0)
is a high intensity diode , molded in a water clear plastic
package.
․The
device is spectrally matched with phototransistor , photodiode
and infrared receiver module.
Applications
․Free
air transmission system
․Optoelectronic
switch
․Floppy
disk drive
․Infrared
applied system
․Smoke
detector
Device Selection Guide
LED Part No.
HIR
Chip
Material
GaAlAs
Lens Color
Water clear
Everlight Electronics Co., Ltd.
Device No：DIH-033-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 1 of 7
Prepared by：Jaine Tsai
HIR333C/H0
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
I
F
I
FP
V
R
T
opr
T
stg
T
sol
P
d
Rating
100
1.0
5
-40 ~ +85
-40 ~ +85
260
150
Units
mA
A
V
℃
℃
℃
mW
Notes:
*1:I
FP
Conditions--Pulse Width≦100μs and Duty≦1%.
*2:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DIH-033-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 2 of 7
Prepared by：Jaine Tsai
HIR333C/H0
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Condition
I
F
=20mA
I
F
=100mA
Radiant Intensity
Ee
Pulse Width≦100μs ,Duty≦1%
Min.
7.8
--
--
--
--
Typ.
15
80
800
850
45
1.45
Max.
--
--
--
--
--
1.65
2.40
5.25
10
--
Units
mW/sr
I
F
=1A
Pulse Width≦100μs ,Duty≦1%.
Peak Wavelength
Spectral
Bandwidth
λp
Δλ
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=100mA
nm
nm
Forward Voltage
V
F
Pulse Width≦100μs ,Duty≦1%
--
--
--
--
1.80
4.10
--
30
V
I
F
=1A
Pulse Width≦100μs ,Duty≦1%.
Reverse Current
View Angle
I
R
2θ1/2
V
R
=5V
I
F
=20mA
μA
deg
Rank
Condition: I
F
=20mA
Unit: mW/sr
Bin number
Min
Max
M
7.8
12.5
N
11.0
17.6
P
15.0
24.0
Q
21.0
34.0
R
30.0
48.0
Everlight Electronics Co., Ltd.
Device No：DIH-033-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 3 of 7
Prepared by：Jaine Tsai
HIR333C/H0
Typical Electro-Optical Characteristics Curves
Fig.1 Forward Current vs.
Ambient Temperature
140
120
100
80
60
40
20
0
Fig.2 Spectral Distributio
n
100
80
60
40
20
0
I
F
=20mA
Ta=25° C
-40 -20 0
20
40
60
80
100
790 810 830 850 870 890 910 930 950
Fig.3 Peak Emission Wavelength
Ambient Temperature
900
Fig.4 Forward Current
vs. Forward Voltage
4
10
875
3
10
850
825
2
10
800
-25
0
25
50
75
100
1
10
0
1
2
3
4
5
6
7
8
Everlight Electronics Co., Ltd.
Device No：DIH-033-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 4 of 7
Prepared by：Jaine Tsai
HIR333C/H0
Typical Electro-Optical Characteristics Curves
Fig.5 Relative Intensity vs.
Forward Current
Fig.6 Relative Radiant Intensity vs.
Angular Displacement
1000
Ie-Radiant Intensity(mW/sr)
-20
-10
0
10
20
30
100
1.0
0.9
40
50
60
70
80
0.6 0.4 0.2
0
0.2 0.4 0.6
10
0.8
0.7
0
10
0
10
1
10
2
10
3
10
4
I
F
-Forward Current (mA
)
Fig.7 Relative Intensity vs.
Ambient Temperature(°C)
Fig.8 Forward Voltage vs.
Ambient Temperature(°C)
20
Ie-Radiant Intensity (mW/sr)
1.6
15
1.4
I
F
=20mA
I
F
=20mA
10
1.2
5
25
50
75
100
120
1
25
50
75
100
120
Everlight Electronics Co., Ltd.
Device No：DIH-033-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 5 of 7
Prepared by：Jaine Tsai
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