Technical Data Sheet
High Power Infrared LED
Features
․Small
package with high efficiency
․Peak
wavelength
λp=850nm
․Soldering
methods: SMT
․Thermal
resistance (junction to lead): 35℃/W.
․Pb
free
․The
product itself will remain within RoHS compliant version.
HIR-A07/L183-P01
Descriptions
․HIR-A07/L183-P01
series is an infrared emitting diode in miniature
SMD package which is molded in a water clear plastic with
flat top view lens.
․The
device is spectrally matched with silicon photodiode,
Phototransistor.
Applications
․CCD
Camera
․Night
Vision
․Infrared
applied system
Materials
Items
Housing
Encapsulating Resin
Electrodes
Die attach
Chip
Description
Heat resistant polymer
Clear silicone resin
Ag plating copper alloy
Silver paste
AlGaAs
Everlight Electronics Co., Ltd.
Device No：DTH-A07-278
http:\\www.everlight.com
Prepared date：03-29-2007
Rev 1
Page: 1 of 10
Prepared by：JAINE TSAI
HIR-A07/L183-P01
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Everlight Electronics Co., Ltd.
Device No：DTH-A07-278
http:\\www.everlight.com
Prepared date：03-29-2007
Rev 1
Page: 2 of 10
Prepared by：JAINE TSAI
HIR-A07/L183-P01
Absolute Maximum Ratings (Ta=25℃)
Parameter
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction temperature
Power Dissipation @I
F
=700mA
Symbol
I
F
V
R
T
opr
T
stg
T
j
P
d
Rating
700
5
-40 ~ +85
-40 ~ +85
125
1
Units
mA
V
℃
℃
ºC
W
Note: We suggest that customer should add the heat sink with
HIR-A07/L183-P01
to exclude the heat.
Electro-Optical Characteristics (Ta=25℃)
Parameter
Total Radiated Power
Radiant Intensity
Peak Wavelength
Spectral Bandwidth
Forward Voltage
Reverse Current
Optical Rise Time
Optical Fall Time
View Angle
Thermal resistance,
junction to heat-sink
Note.
Symbol
Po
I
E
λp
Δλ
V
F
I
R
Tr
Tf
2θ1/2
Rth j-L
Condition
I
F
=350mA
I
F
=700mA
I
F
=350mA
I
F
=700mA
I
F
=20mA
I
F
=20mA
I
F
=350mA
I
F
=700mA
V
R
=5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=700mA
Min.
60
120
10
30
--
--
1.0
1.2
--
--
--
--
--
Typ.
110
220
35
70
850
50
1.6
1.9
--
11
7
125
35
Max.
--
--
--
--
--
--
2.5
3.0
10
--
--
--
--
Units
mW
mW/sr
nm
nm
V
μA
ns
ns
deg
℃/W
1. Radiometric measurement tolerance : ±10%
2 .2θ
1/2
is the off axis angle from lamp centerline where the radiant intensity
peak value.
3. Forward Voltage measurement tolerance : ±0.1V
http:\\www.everlight.com
Prepared date：03-29-2007
Rev 1
is 1/2 of the
Everlight Electronics Co., Ltd.
Device No：DTH-A07-278
Page: 3 of 10
Prepared by：JAINE TSAI
HIR-A07/L183-P01
Typical Electro-Optical Characteristics Curves
Fig.1 Forward Current vs.
Ambient Temperature
900
800
700
600
500
400
300
200
100
0
20
40
60
80
100 120
Rthj-L=35°/W
Fig.2 Spectral Distributio
n
100
80
60
40
20
0
I
F
=20mA
Ta=25° C
790 810 830 850 870 890 910 930 950
Fig.3 Peak Emission Wavelength
Ambient Temperature
Fig.4 Forward Current
vs. Forward Voltage
3.0
2.8
900
875
2.6
2.4
2.2
850
825
800
-25
2.0
1.8
1.6
1.4
1.2
1.0
0
25
50
75
100
0
100
300
500
700
900
1000
Everlight Electronics Co., Ltd.
Device No：DTH-A07-278
http:\\www.everlight.com
Prepared date：03-29-2007
Rev 1
Page: 4 of 10
Prepared by：JAINE TSAI
HIR-A07/L183-P01
Typical Electro-Optical Characteristics Curves
Fig.5 Relative Radiant Intensity vs. Angular Displacement
0
1.0
0.9
0.8
10
20
30
40
50
60
70
80
R e la tiv e I n t e n s it y ( % )
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
90
Angle (degree)
Everlight Electronics Co., Ltd.
Device No：DTH-A07-278
http:\\www.everlight.com
Prepared date：03-29-2007
Rev 1
Page: 5 of 10
Prepared by：JAINE TSAI
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