RJK2508DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0508-0200
Rev.2.00
Feb.10.2005
Features
•
Low on-resistance
•
Low leakage current
•
High speed switching
Outline
PRSS0004ZE-A
(Previous code: TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
250
±30
50
100
50
100
17
18.0
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Feb.10.2005 page 1 of 6
RJK2508DPK
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
trr
Qrr
Min
250
—
—
3.0
19
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
32
0.056
2600
370
43
40
210
110
145
60
15
26
1.0
180
1.2
Max
—
1
±0.1
4.5
—
0.064
—
—
—
—
—
—
—
—
—
—
1.5
—
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 250 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 25 A, V
DS
= 10 V
Note4
I
D
= 25 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 25 A
V
GS
= 10 V
R
L
= 5
Ω
Rg = 10
Ω
V
DD
= 200 V
V
GS
= 10 V
I
D
= 50 A
I
F
= 50 A, V
GS
= 0
Note4
I
F
= 50 A, V
GS
= 0
diF/dt = 100 A/µs
Rev.2.00 Feb.10.2005 page 2 of 6
RJK2508DPK
Main Characteristics
Power vs. Temperature Derating
200
Pch (W)
Maximum Safe Operation Area
1000
300
150
I
D
(A)
100
30
10
3
1
0.3
0.1
10
µ
1 m
100
µ
s
s
s
Channel Dissipation
100
Drain Current
DC Operation
(Tc = 25°C)
PW = 10 ms (1shot)
Operation in
50
0.03
this area is
0.01
limited by R
DS(on)
0.003
Ta = 25°C
0.001
0.1 0.3
1
0
50
100
150
Tc (°C)
200
3
10
30
100 300 1000
Case Temperature
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
Pulse Test
8.5 V
10 V
8V
7.5 V
80
7V
60
6.5 V
40
6V
20
5.5 V
V
GS
= 5 V
0
4
8
12
Drain to Source Voltage
16
20
V
DS
(V)
0
I
D
(A)
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
I
D
(A)
80
60
Drain Current
Drain Current
40
20
75°C
25°C
Tc =
−25°C
8
10
V
GS
(V)
2
4
6
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
8
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1
V
GS
= 10 V
0.5
6
0.2
0.1
0.05
4
I
D
= 50 A
2
25 A
10 A
0.00
0.01
1
3
Pulse Test
10
30
100 300
Drain Current I
D
(A)
1000
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
Rev.2.00 Feb.10.2005 page 3 of 6
RJK2508DPK
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
0.16
I
D
= 50 A
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
100
Tc =
−25°C
30
10
75°C
3
1
0.3
0.1
0.1
25°C
0.12
25 A
0.08
10 A
0.04
0
−25
V
GS
= 10 V
0
25 50 75
Case Temperature
100 125 150
Tc (°C)
V
DS
= 10 V
Pulse Test
0.3
1
3
10
I
D
(A)
30
100
Drain Current
1000
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
100000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
30000
f = 1 MHz
10000
3000
1000
300
100
30
10
500
Capacitance C (pF)
200
100
50
20
10
5
2
1
1
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
3
10
30
100 300 1000
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
400
16
V
DD
= 200 V
100 V
50 V
V
DS
V
GS
12
V
GS
(V)
Ciss
Coss
Crss
0
50
100
150
Drain to Source Voltage V
DS
(V)
Switching Characteristics
V
GS
= 10 V, V
DD
= 125 V
PW = 5
µs,
duty < 1 %
Rg = 10
Ω
tf
10000
V
DS
(V)
I
D
= 50 A
300
Switching Time t (ns)
tr
Drain to Source Voltage
Gate to Source Voltage
1000
200
8
tf
td(off)
100
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
I
D
(A)
100
100
V
DD
= 200 V
100 V
50 V
20
40
60
80
4
0
0
100
Gate Charge
Qg (nC)
Rev.2.00 Feb.10.2005 page 4 of 6
RJK2508DPK
Reverse Drain Current vs.
Source to Drain Voltage
100
5
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature
I
D
= 10 mA
4
1 mA
I
DR
(A)
80
60
Reverse Drain Current
Gate to Source Cutoff Voltage
V
GS(off)
(V)
3
0.1 mA
40
10 V
5V
2
20
V
GS
= 0 V
1
V
DS
= 10 V
0
-25 0
25
0
0.4
0.8
1.2
1.6
V
SD
(V)
2.0
50
75
100 125 150
Tc (°C)
Source to Drain Voltage
Case Temperature
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.833°C/W, Tc = 25°C
PDM
D=
PW
T
0.03
0.02
1
0.0
1s
PW
T
u
tp
ho
lse
0.01
10
µ
100
µ
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10Ω
Vin
10 V
V
DD
= 125 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
t
f
90%
td(on)
tr
Rev.2.00 Feb.10.2005 page 5 of 6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
