RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar
Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
response for application to 4GHz. This RFIC is a 2-stage design that pro-
vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-
est SiGe HBT 50GHz F
T
process, featuring one-micron emitters with
V
CEO
>7V. These unconditionally stable amplifiers have less than 1dB gain
drift over 125°C operating range (-40°C to +85°C) and are ideal for use
as buffer amplifiers in oscillator applications covering
Optimum Technology
cellular, ISM, and narrowband PCS bands.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
DCto400MHz Operation
Single Supply Voltage
Excellent Isolation, >50dB at
900MHz
50W In/Out, Broadband
Match for Operation from DC-
4GHz
Unconditionally Stable
Applications
Isolation vs. Frequency
0
-2 0
dB
-4 0
-6 0
-8 0
100
500
900
1900
2400
3500
6000
Buffer Amplifier for Oscillator
Applications
Broadband Gain Blocks
IF Amp
Frequency MHz
Parameter
Small Signal Gain
Min.
15
12
-13.0
-1.5
Specification
Typ.
17
15
-9.5
1.0
Max.
19
17
Unit
Condition
dB
850MHz
dB
1950MHz
Output Power at 1dB Compression
dBm
1950MHz
Output Third Order Intercept Point
dBm
1950MHz
Determined by Return Loss (<-10dB)
MHz
Input Return Loss
9.5
11.2
dB
1950MHz
Output Return Loss
7
8
dB
1950MHz
Noise Figure
2.5
4.0
dB
1950MHz
Device Voltage
2.5
2.8
3.1
V
Thermal Resistance
255
°C/W
Test Conditions: V
S
=5V, I
D
=8mA Typ., OIP3 Tone Spacing=1MHz, P
OUT
per tone=-20dBm, R
BIAS
=270Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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