70CRU02PbF
Vishay High Power Products
Ultrafast Rectifier,
2 x 35 A FRED Pt
TM
FEATURES
Base
common
cathode
2
•
•
•
•
•
•
TO-218
1
3
Anode
2 Anode
2
1 Common
cathode
Two common-cathode diodes
Available
Ultrafast reverse recovery
Ultrafast reverse recovery current shape
RoHS*
COMPLIANT
Low forward voltage drop
Low leakage current
Optimized for power conversion: welding and industrial
SMPS applications
• Up to 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 70CRU02 integrates two state of the art Vishay HPP
ultrafast recovery rectifiers in the common-cathode
configuration. The planar structure of the diodes, and the
platinum doping life-time control, provide a ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics. These devices are
thus intended for high frequency applications in which the
switching energy is designed not to be predominant portion
of the total energy, such as in the output rectification stage
of welding machines, SMPS, dc-to-dc converters. Their
extremely optimized stored charge and low recovery current
reduce both over-dissipation in the switching elements (and
snubbers) and EMI/RFI.
PRODUCT SUMMARY
t
rr
I
F(AV)
at T
C
= 145 °C
V
R
28 ns
2 x 35 A
200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous forward current per diode
Cathode to anode voltage
Single pulse forward current per diode
Maximum power dissipation per module
Operating junction and storage temperatures
SYMBOL
I
F(AV)
V
R
I
FSM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
T
C
= 145 °C
MAX.
35
200
300
67
- 55 to 175
UNITS
A
V
A
W
°C
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
V
F
TEST CONDITIONS
I
R
= 60 µA
I
F
= 35 A
Forward voltage
I
F
= 35 A, T
J
= 125 °C
I
F
= 35 A, T
J
= 175 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured from A-lead to K-lead 5 mm
from package body
MIN.
200
-
-
-
-
-
-
-
TYP.
-
0.95
0.9
0.85
-
-
50
10
MAX.
-
1.09
1.0
0.9
60
2
-
-
µA
mA
pF
nH
V
UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94509
Revision: 21-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
70CRU02PbF
Vishay High Power Products
Ultrafast Rectifier,
2 x 35 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
T
J
= 25 °C
Reverse recovery time
t
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 35 A
V
RR
= 100 V
dI
F
/dt = 200 A/µs
TEST CONDITIONS
I
F
= 1 A
V
R
= 30 V
dI
F
/dt = 200 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
-
34
26
49
3.7
8.2
48.7
202
MAX.
28
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
µC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-218
per diode
both legs
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-
-
-
-
-
1.2
(10)
TYP.
0.8
-
0.2
5.5
0.2
-
MAX.
0.9
0.45
-
-
-
2.4
(20)
g
oz.
N
⋅
m
(lbf
⋅
in)
K/W
UNITS
70CRU02
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94509
Revision: 21-Jul-08
70CRU02PbF
Ultrafast Rectifier,
2 x 35 A FRED Pt
TM
Vishay High Power Products
1000
(μA)
1000
T
J
= 175˚C
100
125˚C
Reverse Current - I
R
10
1
25˚C
(A)
0.1
0.01
0
50
100
150
200
Reverse Voltage - V
R
(V)
Instantaneous Forward Current - I
F
100
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Junction Capacitance - C
T
(pF)
T = 175˚C
J
1000
T = 25˚C
J
10
T = 125˚C
J
T = 25˚C
J
100
1
0
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
4
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
(°C/W)
thJC
Thermal Impedance Z
P
DM
0.1
Single
Pulse
(Thermal Resistance)
Notes:
t1
t2
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Document Number: 94509
Revision: 21-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
70CRU02PbF
Vishay High Power Products
Ultrafast Rectifier,
2 x 35 A FRED Pt
TM
80
180
Allowable Case Temperature (°C)
70
60
DC
trr ( ns )
If =
35A
Vrr = 100V
170
160
150
140
130
120
Square
wave (D = 0.50)
110
Rated Vr
applied
100
90
see
note (1)
80
0
10
20
30
40
50
60
Average Forward Current - I
F(AV)
(A)
50
40
30
20
10
0
100
Tj = 125˚C
Tj = 25˚C
1000
di
F
/dt (A/μs )
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
600
50
500
Average Power Loss ( W )
If =
35A
Vrr = 100V
40
400
RMS Limit
Qrr ( nC )
Tj = 125˚C
30
20
10
0
0
10
20
30
40
50
60
Average Forward Current - I
F(AV)
(A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
300
200
Tj = 25˚C
100
0
100
di
F
/dt (A/μs )
1000
Fig. 6 - Forward Power Loss Characteristics
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94509
Revision: 21-Jul-08
70CRU02PbF
Ultrafast Rectifier,
2 x 35 A FRED Pt
TM
V
R
= 200 V
Vishay High Power Products
0.01
Ω
L = 70 µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94509
Revision: 21-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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