US6H23
Transistors
Dual digital transistors
US6H23
Features
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat)
=40mV at I
C
/ I
B
=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C
=600mA.
Dimensions
(Unit : mm)
TUMT6
Structure
NPN silicon epitaxial planar transistor
Abbreviated symbol : H23
Packaging specifications and h
FE
Package
Type
Packaging type
Code
Basic ordering unit (pieces)
US6H23
TUMT6
Taping
TR
3000
Equivalent circuit
(6)
(5)
(4)
R=4.7kΩ
TR1
R=4.7kΩ
TR2
(1) : Emitter<<Tr1>>
(2) : Base<<Tr1>>
(3) : Collector<<Tr2>>
(4) : Emitter<<Tr2>>
(5) : Base<<Tr2>>
(6) : Collector<<Tr1>>
(1)
(2)
(3)
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
20
20
12
600
1
0.4(TOTAL)
1.0(TOTAL)
0.7(ELEMENT)
150
−55
to
+150
Unit
V
V
V
mA
A
∗1
W
∗2
W
∗3
W
∗3
°C
°C
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=10ms 1 Pulse
∗2
Each terminal mounted on a recommended land
∗3
Mounted on a ceramic board
0.2Max.
1/3
US6H23
Transistor
Electrical characterristic curves
100
COLLECTOR CURRENT : Ic (
mA)
V
CE
=5V
100
Ta=25˚C
I
B
=50uA
10000
Ta=125°C
Ta=25°C
Ta=
−40°C
COLLECTOR CURRENT : I
C
(
mA)
80
I
B
=40uA
I
B
=30uA
I
B
=20uA
10
60
DC CURRENT GAIN : h
FE
Ta=125˚C
25˚C
−40˚C
V
CE
=5V
1000
40
I
B
=10uA
20
1
0.1
0.1
1
10
0
100
0
1
2
3
4
5
6
7
8
9 10
1
10
100
1000
BASE TO EMITTER VOLTAGE : V
BE
(
V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Typical output characteristics
Fig.3 DC current gain vs.
collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Ic/Ib=20
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(
V)
1
1000
Ic/Ib=20
100000
10000
1000
100
10
1
0.1
0.1
100
0.1
Ta=125˚C
25˚C
−40˚C
0.01
10
Ta=−40˚C
25˚C
125˚C
1
0.001
0.1
1
10
100
1000
0.1
0.1
ON RESISTANCE : R
on
(Ω)
Ta=25°C
f=1kHz
R
L
=1kΩ
h
FE
=1500
(5V / 50mA)
1
10
100
1
10
100
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
INPUT VOLTAGE : VI (V)
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.5 Base-emitter saturation
voltage vs. collector current
Fig.6 "ON" resistance vs. input voltage
3/3
Appendix
Notes
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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