= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt R
1
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
Q
1
+V
1
0
t
2
t
1
R
2
Q
4
t
3
C1
0
-V
2
R
3
Q
3
-V
4
V
RM
R
4
L
LOOP
DUT
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
0
0.25 I
RM
I
RM
V
R
RHRU7580
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
500
-
-
-
2.0
-
-
85
100
-
-
-
-
0.8
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RHRU7590
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
-
500
-
-
-
2.0
-
85
100
-
-
-
-
0.8
RHRU75100
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
-
-
500
-
-
-
2.0
85
100
-
-
-
-
0.8
UNITS
V
V
µA
µA
µA
µA
mA
mA
mA
mA
ns
ns
ns
ns
nC
pF
o
C/W
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
500
-
-
-
2.0
-
-
-
85
100
-
-
-
-
0.8
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
V
R
= 10V, I
F
= 0A
I
F
dI
F
dt
t
A
t
RR
t
B
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
2
RHRU7570, RHRU7580, RHRU7590, RHRU75100
Typical Performance Curves
400
1000
+175
o
C
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
100
+100
o
C
+175
o
C
10
+25
o
C
100
+100
o
C
10
1
0.1
+25
o
C
1
0
1
3
2
V
F
, FORWARD VOLTAGE (V)
4
5
0.01
0
200
400
600
800
1000
V
R
, REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
100
T
C
= +25
o
C
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
300
250
t, RECOVERY TIMES (ns)
T
C
= +100
o
C
t, RECOVERY TIMES (ns)
80
t
RR
200
150
t
RR
60
t
A
40
t
B
t
B
100
50
0
t
A
20
0
1
10
I
F
, FORWARD CURRENT (A)
75
1
10
I
F
, FORWARD CURRENT (A)
75
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
500
T
C
= +175
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
75
t, RECOVERY TIMES (ns)
400
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
60
DC
45
SQ. WAVE
30
300
t
RR
200
t
B
100
t
A
15
0
0
25
1
10
I
F
, FORWARD CURRENT (A)
75
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
3
RHRU7570, RHRU7580, RHRU7590, RHRU75100
Typical Performance Curves
800
C
J
, JUNCTION CAPACITANCE (pF)
700
600
500
400
300
200
100
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
(Continued)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
I
MAX
= 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
Q
1
L
R
+
V
DD
130Ω
1MΩ
DUT
V
AVL
12V
Q
2
130Ω
CURRENT
SENSE
I V
V
DD
I
L
I
L
-
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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