RHRU7540, RHRU7550, RHRU7560
Data Sheet
April 1995
File Number
3945.1
75A, 400V - 600V Hyperfast Diodes
Title
HR
540
HRU
50,
HRU
60)
b-
t
A,
0V
0V
per
t
ode
uth
()
ey-
rds
ter-
r-
ra-
n,
per
t
ode
a-
che
RHRU7540, RHRU7550 and RHRU7560 (TA49067) are
hyperfast diodes with soft recovery characteristics
(t
RR
< 55ns). They have half the recovery time of ultrafast
diodes and are silicon nitride passivated ion-implanted epi-
taxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
RHRU7540
RHRU7550
RHRU7560
PACKAGE
TO-218
TO-218
TO-218
BRAND
RHRU7540
RHRU7550
RHRU7560
• General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +80
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
RHRU7540
400
400
400
75
150
750
190
50
-65 to +175
RHRU7550
500
500
500
75
150
750
190
50
-65 to +175
RHRU7560
600
600
600
75
150
750
190
50
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o
C
©2001 Fairchild Semiconductor Corporation
RHRU7540, RHRU7550, RHRU7560 Rev. A
RHRU7540, RHRU7550, RHRU7560
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
RHRU7540
SYMBOL
V
F
TEST CONDITION
I
F
= 75A, T
C
= +25
o
C
I
F
= 75A, T
C
= +150
o
C
I
R
V
R
= 400V, T
C
= +25
o
C
V
R
= 500V, T
C
= +25
o
C
V
R
= 600V, T
C
= +25
o
C
I
R
V
R
= 400V, T
C
= +150
o
C
V
R
= 500V, T
C
= +150
o
C
V
R
= 600V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 75A, dI
F
/dt = 100A/
µ
s
t
A
t
B
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
R
1
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
Q
1
+V
1
0
t
2
t
1
R
2
Q
4
t
3
C1
0
-V
2
R
3
Q
3
-V
4
V
RM
R
4
V
R
L
LOOP
DUT
0.25 I
RM
I
RM
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
£
R
4
10
0
RHRU7550
MAX
2.1
1.7
500
-
-
2.0
-
-
55
60
-
-
-
-
0.8
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
35
18
90
200
-
MAX
2.1
1.7
-
500
-
-
2.0
-
55
60
-
-
-
-
0.8
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RHRU7560
TYP
-
-
-
-
-
-
-
-
-
-
35
18
90
200
-
MAX
2.1
1.7
-
-
500
-
-
2.0
55
60
-
-
-
-
0.8
UNITS
V
V
µ
A
µ
A
µ
A
mA
mA
mA
ns
ns
ns
ns
nC
pF
o
C/W
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
35
18
90
200
-
I
F
= 75A, dI
F
/dt = 100A/
µ
s
I
F
= 75A, dI
F
/dt = 100A/
µ
s
I
F
= 75A, dI
F
/dt = 100A/
µ
s
V
R
= 10V, I
F
= 0A
I
F
dI
F
dt
t
A
t
RR
t
B
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
©2001 Fairchild Semiconductor Corporation
RHRU7540, RHRU7550, RHRU7560 Rev. A
RHRU7540, RHRU7550, RHRU7560
Typical Performance Curves
300
5000
+175
o
C
1000
I
F
, FORWARD CURRENT (A)
100
I
R
, REVERSE CURRENT (µA)
100
+100
o
C
10
+100
o
C
+175
o
C
10
+25
o
C
1
+25
o
C
0.1
0.01
1
0
0.5
1.0
1.5
2.0
V
F
, FORWARD VOLTAGE (V)
2.5
3.0
0
100
200
300
400
V
R
, REVERSE VOLTAGE (V)
500
600
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
60
50
t, RECOVERY TIMES (ns)
40
30
20
10
0
t
A
T
C
= +25
o
C
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
150
T
C
= +100
o
C
t, RECOVERY TIMES (ns)
t
RR
125
t
RR
100
75
50
t
B
25
0
t
A
t
B
1
10
I
F
, FORWARD CURRENT (A)
75
1
10
I
F
, FORWARD CURRENT (A)
75
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
250
T
C
= +175
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
75
DC
60
SQ. WAVE
45
t, RECOVERY TIMES (ns)
200
150
t
RR
100
t
A
30
50
t
B
15
0
1
10
I
F
, FORWARD CURRENT (A)
75
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
©2001 Fairchild Semiconductor Corporation
RHRU7540, RHRU7550, RHRU7560 Rev. A
RHRU7540, RHRU7550, RHRU7560
Typical Performance Curves
600
C
J
, JUNCTION CAPACITANCE (pF)
(Continued)
500
400
300
200
100
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
I
MAX
= 1A
L = 40mH
R < 0.1
Ω
2
E
AVL
= 1/2LI [V
AVL
/(V
AVL
- V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
Q
1
L
R
+
V
DD
130Ω
1MΩ
DUT
V
AVL
12V
Q
2
130Ω
CURRENT
SENSE
I V
V
DD
I
L
I
L
-
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORM
©2001 Fairchild Semiconductor Corporation
RHRU7540, RHRU7550, RHRU7560 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
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DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
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TM
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FACT Quiet Series™
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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