RURD420, RURD420S
Data Sheet
January 2000
File Number
3614.5
4A, 200V Ultrafast Diodes
The RURD420 and RURD420S are ultrafast diodes with soft
recovery characteristics (t
rr
< 30ns). They have low forward
voltage drop and are ion-implanted epitaxial planar
construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and ultrafast soft recovery minimize ringing and
electrical noise in many power switching circuits, reducing
power loss in the switching transistors.
Formerly developmental type TA49034.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURD420
RURD420S
PACKAGE
TO-251
TO-252
BRAND
RUR420
RUR420
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, i.e., RURD42059A.
CATHODE
(FLANGE)
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD420
RURD420S
200
200
200
4
8
40
30
10
-65 to 175
300
260
UNITS
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 159
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
1
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
RURD420, RURD420S
Electrical Specifications
SYMBOL
V
F
I
F
= 4A
I
F
= 4A, T
C
= 150
o
C
I
R
V
R
= 200V
V
R
= 200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 4A, dI
F
/dt = 100A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 8), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 8).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 8).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 4A, dI
F
/dt = 100A/µs
I
F
= 4A, dI
F
/dt = 100A/µs
I
F
= 4A, dI
F
/dt = 100A/µs
V
R
= 10V, I
F
= 0A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
11
9
12
15
-
MAX
1.0
0.83
100
500
30
35
-
-
-
-
5
UNITS
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
20
I
F
, FORWARD CURRENT (A)
175
o
C
I
R
, REVERSE CURRENT (µA)
100
175
o
C
10
10
1
100
o
C
0.1
100
o
C
1
25
o
C
0.01
25
o
C
0.5
0
0.25
0.5
0.75
1
1.25
1.5
V
F
, FORWARD VOLTAGE (V)
0.001
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURD420, RURD420S
Typical Performance Curves
25
T
C
= 25
o
C, dI
F
/dt = 100A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
20
trr
15
40
trr
30
ta
20
tb
10
(Continued)
50
T
C
= 100
o
C, dI
F
/dt = 100A/µs
10
ta
tb
5
0
0.5
1
I
F
, FORWARD CURRENT (A)
0
4
0.5
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
100
T
C
= 175
o
C, dI
F
/dt = 100A/µs
t, RECOVERY TIMES (ns)
80
trr
5
4
DC
3
SQ. WAVE
2
60
ta
40
tb
20
1
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
0
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 7. t
rr
TEST CIRCUIT
FIGURE 8. t
rr
WAVEFORMS AND DEFINITIONS
3
RURD420, RURD420S
Test Circuits and Waveforms
I = 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
(Continued)
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 10. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
