RURD420, RURD420S
Data Sheet
January 2000
File Number
3614.5
4A, 200V Ultrafast Diodes
Title
UR
20,
RD
0S)
b-
t
A,
0V
rafa
odes
utho
ey-
rds
ter-
rpo-
on,
mi-
n-
ctor,
a-
che
ergy
ted,
itch
wer
p-
es,
wer
itch
-
The RURD420 and RURD420S are ultrafast diodes with soft
recovery characteristics (t
rr
< 30ns). They have low forward
voltage drop and are ion-implanted epitaxial planar
construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and ultrafast soft recovery minimize ringing and
electrical noise in many power switching circuits, reducing
power loss in the switching transistors.
Formerly developmental type TA49034.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURD420
RURD420S
PACKAGE
TO-251
TO-252
BRAND
RUR420
RUR420
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, i.e., RURD42059A.
CATHODE
(FLANGE)
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD420
RURD420S
UNITS
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 159
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
200
200
200
4
8
40
30
10
-65 to 175
300
260
©2001 Fairchild Semiconductor Corporation
RURD420, RURD420S Rev. A
RURD420, RURD420S
Electrical Specifications
SYMBOL
V
F
I
F
= 4A
I
F
= 4A, T
C
= 150
o
C
I
R
V
R
= 200V
V
R
= 200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 4A, dI
F
/dt = 100A/
µ
s
t
a
t
b
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 8), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 8).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 8).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 4A, dI
F
/dt = 100A/
µ
s
I
F
= 4A, dI
F
/dt = 100A/
µ
s
I
F
= 4A, dI
F
/dt = 100A/
µ
s
V
R
= 10V, I
F
= 0A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
11
9
12
15
-
MAX
1.0
0.83
100
500
30
35
-
-
-
-
5
UNITS
V
V
µ
A
µ
A
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
20
175
o
C
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
100
175
o
C
10
10
1
100
o
C
0.1
100
o
C
1
25
o
C
0.01
25
o
C
0.5
0
0.25
0.5
0.75
1
1.25
1.5
V
F
, FORWARD VOLTAGE (V)
0.001
0
50
100
V
R
, REVERSE VOLTAGE (V)
150
200
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURD420, RURD420S Rev. A
RURD420, RURD420S
Typical Performance Curves
25
T
C
= 25
o
C, dI
F
/dt = 100A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
20
trr
15
40
trr
30
ta
20
tb
10
(Continued)
50
T
C
= 100
o
C, dI
F
/dt = 100A/µs
10
ta
tb
5
0
0.5
1
I
F
, FORWARD CURRENT (A)
0
4
0.5
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
100
T
C
= 175
o
C, dI
F
/dt = 100A/µs
t, RECOVERY TIMES (ns)
80
trr
5
4
DC
3
SQ. WAVE
2
60
ta
40
tb
20
1
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
0
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 7. t
rr
TEST CIRCUIT
FIGURE 8. t
rr
WAVEFORMS AND DEFINITIONS
©2001 Fairchild Semiconductor Corporation
RURD420, RURD420S Rev. A
RURD420, RURD420S
Test Circuits and Waveforms
I = 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
(Continued)
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 10. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RURD420, RURD420S Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
