RURH30100CC
Data Sheet
January 2000
File Number
2932.3
30A, 1000V Ultrafast Dual Diode
Title
UR
010
C)
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t
A,
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Dual
ode)
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A,
00V
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Dual
ode,
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ctor,
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The RURH30100CC is an ultrafast dual diode with soft
recovery characteristics (t
rr
< 110ns). It has low forward
voltage drop and is of silicon nitride passivated ion-implanted
epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic
minimizes ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Formerly developmental type TA09904.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <110ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURH30100CC
PACKAGE
TO-218AC
BRAND
URH30100C
Packaging
JEDEC TO-218AC
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
1
A
2
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
RURH30100CC
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 120
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
1000
1000
1000
30
60
300
125
30
-65 to 175
©2001 Fairchild Semiconductor Corporation
RURH30100CC Rev. A
RURH30100CC
Electrical Specifications
SYMBOL
V
F
I
F
= 30A
I
F
= 30A, T
C
= 150
o
C
I
R
V
R
= 1000V
V
R
= 1000V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 30A, dI
F
/dt = 100A/
µ
s
t
a
t
b
R
θ
JC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), at dI
F
/dt = 100A/
µ
s summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current at dI
F
/dt = 100A/
µ
s (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 30A, dI
F
/dt = 100A/
µ
s
I
F
= 30A, dI
F
/dt = 100A/
µ
s
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
90
45
-
MAX
1.8
1.6
250
1
110
150
-
-
1.2
UNITS
V
V
µ
A
mA
ns
ns
ns
ns
o
C/W
Typical Performance Curves
200
100
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
400
100
T
J
= 175
o
C
T
J
= 175
o
C
10
T
J
= 100
o
C
1.0
10
T
J
= 100
o
C
T
J
= 25
o
C
0.1
T
J
= 25
o
C
1
0.01
0
0.5
1.0
1.5
2.0
2.5
V
F
, FORWARD VOLTAGE DROP (V)
0
200
400
600
800
1000
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURH30100CC Rev. A
RURH30100CC
Typical Performance Curves
200
(Continued)
35
I
F(AVG)
, AVERAGE CURRENT (A)
30
DC
25
20
15
10
5
0
100
SQUARE WAVE
t, RECOVERY TIMES (ns)
150
t
rr
100
t
a
50
t
b
0
1.0
10
I
F
, FORWARD CURRENT (A)
50
120
140
160
180
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 5. t
rr
TEST CIRCUIT
I = 1.225A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RURH30100CC Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H
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