MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H3340M
BLOCK DIAGRAM
330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The
output power and drain current increase as the gate voltage
increases. With a gate voltage around 4V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 4.5V (typical) and 5V
(maximum). At V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>55W,
η
T
>35% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA55H3340M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA55H3340M
MITSUBISHI ELECTRIC
1/9
18 July 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA55H3340M
RATING
17
6
100
65
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=330-400MHz,
Z
G
=Z
L
=50Ω
Note.1.The above parameters are independently guaranteed.
Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
330
55
TYP
MAX
400
UNIT
MHz
W
%
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
35
-50
3:1
1
dBc
—
mA
—
—
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<65W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=55W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or
destroy
Note. All parameters, conditions, ratings, and limits are subject to change without notice.
RA55H3340M
MITSUBISHI ELECTRIC
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18 July 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA55H3340M
2
nd
, 3
rd
HARMONICS versus FREQUENCY
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
OUTPUT POWER P
out
(W)
70
INPUT VSWR
ρ
in
(-)
60
50
40
30
20
10
0
ρ
in
η
T
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
80
70
60
50
40
30
20
10
TOTAL
EFFICIENCY
η
T
(%)
HARMONICS (dBc)
-30
-40
-50
3
rd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
-60
2
nd
-70
-80
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
0
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
10
15
INPUT POWER P
in
(dBm)
20
I
DD
f=330MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
20
16
12
8
4
0
60
50
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=365MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
24
20
16
12
8
4
0
DRAIN CURRENT
I
DD
(A)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
I
DD
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
24
20
16
12
8
4
0
20
DRAIN CURRENT I
DD
(A)
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
OUTPUT POWER P
out
(W)
f=330MHz,
V
GG
=5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
120
110
100
90
80
70
60
50
40
30
20
10
0
2
f=365MHz,
V
GG
=5V,
P
in
=50mW
P
out
P
out
I
DD
I
DD
24
22
20
18
16
14
12
10
8
6
4
2
0
16
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
RA55H3340M
MITSUBISHI ELECTRIC
3/9
18 July 2007
DRAIN CURRENT I
DD
(A)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA55H3340M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
f=400MHz,
V
GG
=5V,
P
in
=50mW
P
out
I
DD
24
22
20
18
16
14
12
10
8
6
4
2
0
16
OUTPUT POWER P
out
(W)
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=330MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
DRAIN CURRENT I
DD
(A)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
16
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
OUTPUT POWER P
out
(W)
90
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=365MHz,
V
DD
=12.5V,
P
in
=50mW
18
16
P
out
14
12
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
f=400MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
18
16
14
I
DD
12
10
8
6
4
2
0
RA55H3340M
MITSUBISHI ELECTRIC
4/9
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
18 July 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA55H3340M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.60 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA55H3340M
MITSUBISHI ELECTRIC
5/9
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
18 July 2007
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