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74AHC132BQ-Q100

产品描述IC NAND GATE, Gate
产品类别逻辑    逻辑   
文件大小155KB,共18页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
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74AHC132BQ-Q100概述

IC NAND GATE, Gate

74AHC132BQ-Q100规格参数

参数名称属性值
零件包装代码QFN
包装说明HVQCCN,
针数14
Reach Compliance Codeunknown
系列AHC/VHC/H/U/V
JESD-30 代码R-PQCC-N14
长度3 mm
逻辑集成电路类型NAND GATE
功能数量4
输入次数2
端子数量14
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码HVQCCN
封装形状RECTANGULAR
封装形式CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
传播延迟(tpd)19.5 ns
筛选级别AEC-Q100
座面最大高度1 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子形式NO LEAD
端子节距0.5 mm
端子位置QUAD
宽度2.5 mm
Base Number Matches1

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74AHC132-Q100; 74AHCT132-Q100
Quad 2-input NAND Schmitt trigger
Rev. 1 — 8 November 2013
Product data sheet
1. General description
The 74AHC132-Q100; 74AHCT132-Q100 is a high-speed Si-gate CMOS device and is
pin compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with
JEDEC standard No. 7-A.
The 74AHC132-Q100; 74AHCT132-Q100 contains four 2-input NAND gates which accept
standard input signals. They can transform slowly changing input signals into sharply
defined, jitter free output signals. The gate switches at different points for positive-going
and negative-going signals. The difference between the positive voltage V
T+
and the
negative V
T
is defined as the hysteresis voltage V
H
.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Balanced propagation delays
Inputs accept voltages higher than V
CC
Input levels:
For 74AHC132-Q100: CMOS level
For 74AHCT132-Q100: TTL level
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
Multiple package options

 
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