White Electronic Designs
Secure Embedded SLC NAND SSD PBGA
FEATURES
Storage Capacities:
• 4GBYTE and 8GBYTE**
Environment conditions:
• Operating temperature: -40°C to 85°C
• Storage temperature: -55°C to 125°C
SLC Flash
• 3.3V single power supply
• 256 Bytes of attribute memory
Power consumption
• 3.3V ± 10%
• Active mode: Read, Write, Erase operation:
95 mA (Typ), 150 (Max)
• Sleep mode: 10 mA (Typ); TBD mA (Max)
• Secure erase: 85 mA (Max) (4GB)
Interface modes
• PC card memory mode
• PC card I/O mode
• True IDE mode
Less than 1 Error in 10
14
bits read
MTBF > 4,000,000 hours
High shock & vibration tolerance
W/E Endurance: 4,000,000 write/erase cycles
High performance
• Interface Transfer speed in PIO mode 6
• Typical write: 30 MBytes/s in ATA PIO mode 6
• Typical read: 45 MBytes/s in ATA PIO mode 6
• On card ECC up to 4 Bytes per 512 Byte data
sector
Dimensions:
• 27mm x 22mm x 2.60mm
Highly resistant to data corruption due to power loss
Single device connector free solution for embedded
environments
Sophisticated wear leveling
fi
rmware
Enhanced reliability with a 1.27mm pitch; eutectic
tin-lead solder ball
Same form,
fi
t and functionality as W7NxxxVHxxBI
with the following exceptions: M9 = EXTPWR and
L11 = EXTTRIG for secure erase
W7NxxxVHxxBISx
ADVANCED*
Built in ATA/PCMCIA 2.1, and compact
fl
ash 3.0
interface capability
Hardware & software triggered security erase that
meets:***
• NISPOM DoD 5220.22-M
• NSA - 130-2
• Airforce AFSSI - 5020
• Army AR380-19
• Navy NAVSO P-5234-26
Page read operation
Page Program time: 200μs (Typ)
Block erase time: 1.5ms (Typ)
Program/Erase lockout during transition
Data transfer rate: Up to 66MB/s UDMA mode 4
Up to 25MB/s PIO mode 6 or
MDMA mode 4
Sustained read: Up to 45 MBytes/s
Sustained write: Up to 30 MBytes/s with interleaving
Random read: Up to 35 MBytes/s
Random write: Up to 6 MBytes/s
DESCRIPTION
The W7NxxxVHxxBISx series embedded SLC NAND
SSD PBGA is based on
fl
ash technology. This product is
constructed with 32bit RISC base controller and SLC NAND
fl
ash memory devices. They operate from a single 3.3 volt
power supply. Capacity ranges from 4GB to 8GB**.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
** 8GB capacity is TBD.
*** This feature will not be available for sample production
TABLE 1
Item
W7N2G16VHxxBISx
W7N4G16VHxxBISx
Size
4GB
8GB**
Performance
3.0 to 3.60
November 2009
Rev. 1
© 2010 White Electronic Designs Corp. All rights reserved
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
W7NxxxVHxxBISx
ADVANCED*
FIGURE 1 – 224 PBGA PIN CONFIGURATION – TOP VIEW
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
2
NC
3
NC
4
NC
5
NC
6
NC
7
NC
8
NC
9
NC
10
NC
11
NC
12
NC
13
NC
14
NC
15
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
IOCS16#
(IOIS16#)
(WP)
DMARQ
(INPACK#)
INTRQ
(IREQ#)
(READY)
NC
NC
NC
NC
NC
PDIAG#
(STSCHG#)
(BVD1)
IORD#
NC
NC
NC
NC
NC
NC
NC
NC
GND
GND
DASP#
(SPKR#)
(BVD2)
NC
IORDY
(WAIT#)
DMACK#
(REG#)
CS1#
(CE2#)
ATASEL#
(OE#)
CSEL#
GND
GND
NC
NC
NC
NC
NC
NC
GND
WE#
CS0#
(CE1#)
D00
GND
NC
NC
NC
NC
NC
NC
V
CC
IOWR#
D08
D14
D09
D10
NC
NC
NC
NC
NC
NC
V
CC
V
CC
GND
GND
GND
GND
D01
D15
NC
NC
NC
NC
NC
NC
V
CC
NC
NC
GND
GND
GND
D07
D04
V
CC
NC
NC
NC
NC
NC
NC
RESET#
(RESET)
NC
GND
GND
GND
V
CC
D12
V
CC
V
CC
NC
NC
NC
NC
NC
NC
NC
A03
A02
A05
A10
D05
D03
D11
V
CC
NC
NC
NC
NC
NC
NC
GND
A00
A01
A06
A09
D06
D13
EXTTRIG
GND
NC
NC
NC
NC
NC
NC
GND
GND
A04
A07
A08
EXTPWR
D02
GND
GND
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NOTE: Pin assignemts are identical to the W7NxxxVHxxBI standard embedded SLC NAND SSD BGA except for M9 - EXTPWR and L11 - EXTTRIG.
November 2009
Rev. 1
© 2010 White Electronic Designs Corp. All rights reserved
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WN7xxxVHxxBISx Secure
NAND SSD PBGA Features:
1. Secure Erase: A hardware or software triggered erase
which will erase all internal customer data, including
data which may have been left in blocks which have
been set aside because of wear leveling or blocks which
have been declared bad by the
fl
ash controller. This
Secure Erase will be completed within 10 (Typ) sec
of initiation.
2. Power Loss: Once a Secure Erase has been initiated,
if power is lost, then the Secure Erase will complete
the next time power is restored.
3. EXTPWR: An external power pin is provided to which
a backup power supply can be connected. If V
CC
is
removed from the BGA, the part will continue to operate
from the backup power supply. If a battery or capacitor
based temporary power source is attached, a Secure
Erase could be completed even after the main power
on V
CC
is lost. For the 4GB W7N2G16VH1SBISx,
a maximum of 85 mA is needed for ~10 sec during
Secure Erase.
4. Security Erase: The following Security Erase protocol
standards will be supported as options. The customer
may select one of these standard protocols to be
included:
a. NISPOM DoD 5220.22-M
b. NSA-130-2
c. Air Force AFSSI-5020
d. Army AR380-19
e. Navy NAVSO P-5239-26
Upon initiation of a Secure Erase, the simple erase
discussed in item 1 above will be completed
fi
rst, then
the erase protocol which has been specified by the
customer will commence. This allows the data to be
purged quickly for an emergency situation, and also
allows the data to be erased to the specified protocol
in a longer time frame.
W7NxxxVHxxBISx
ADVANCED
5. The W7NxxxVHxxBISx will initiate a Secure Erase:
a. by a logic low level applied to the EXTTRIG pin
for >50ms. The EXTTRIG pin must be high for
>200ms on power-up before arming to allow a
Secure Erase command from this source. The
EXTTRIG pin has an internal 4.7K pull-up resistor
to 3.3V, and is de-bounced, so a momentary
contact to ground or an open-drain output can
also be used.
b. by the receipt of a serial “Secure Erase” command
on the EXTTRIG pin. The serial "Secure Erase"
command uses Manchester like encoding on this
single signal line.
c. Additonal data available on secure app. note:
November 2009
Rev. 1
© 2010 White Electronic Designs Corp. All rights reserved
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ENVIRONMENTAL CHARACTERIZATION
Item
Temperature Cycle
Humidity
Vibration
Shock
Altitude
W7NxxxVHxxBISx
ADVANCED
Performance
JEDEC - JESD STD A104 Temp condition N (-40°C to 85 °C) and soak mode 3; 200 cycles
MIL-STD 810F, Method 507.4, Paragraph 4.5.2 - 10 day test per
fi
gure 507.4-1, 10 day test
MIL-STD 810F, Method 514.5, procedure 1, category 24, 1 hour per axis
MIL-STD 810F, Method 516.5, procedure1, non-operational, 40g, SRS functional shock for ground equipment, three (3)
shock per axis (positive or negative).
JEDEC- JESD22-B, 104-A, test condition B,1500 g pulse, 0.5 msec
MIL-STD 810F, Method 500.4, procedure II, modified to 80,000 ft and non operation 1 hr test duration at altitude
PRODUCT RELIABILITY
Item
MTBF (@ 25°C)
Data reliability
Endurance
Value
TBD
< 1 Non-Recoverable Error in 10
14
Bits Read
TBD
PRODUCT PERFORMANCE
Item
Read Transfer Rate (Typical)
Write Transfer Rate (Typical)
Controller Overhead
(Command to DRQ)
Performance (PIO mode 6 true IDE)
45MBYTES/s
30MBYTES/s
1ms typical, 5ms (max)
ABSOLUTE MAXIMUM RATINGS
Symbol
T
A
T
STG
V
G
V
CC
Parameter
Operating Free-Air Temperature
Storage Temperature
Signal Voltage Relative to GND
Supply Voltage
Min
-40
-40
-0.5
-0.5
Max
+85
+105
V
CC
+0.5
4.0
Unit
C
C
V
V
CURRENT CONSUMPTION FOR SECURE ERASE
Symbol
I
CC
I
CC
I
CC
Supply Current
Parameter
Temp
85°C
25°C
-40°C
Max
TBD
10
TBD
Unit
mA
mA
mA
November 2009
Rev. 1
© 2010 White Electronic Designs Corp. All rights reserved
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
DC ELECTRICAL CHARACTERISTICS
Symbol
V
CC
V
IL
V
IH
V
OL
V
OH
I
CC
Parameter
Supply Voltage Range
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Operating Current, V
CC = 3.3V
Sleep Mode
Operating
Input Leakage Current
Output Leakage Current
Input/Output Capacitance
Min
3.0
-0.3
2.0
—
2.4
—
—
—
—
—
Max
3.6
+0.8
VCC+0.3
0.45
W7NxxxVHxxBISx
ADVANCED
Units
V
V
V
V
V
mA
mA
μA
μA
pF
Notes
—
—
at 4mA
-1mA
—
—
—
—
—
I
LI
I
LO
C
I,O
TBD
165
±10
±10
10
ATTRIBUTE MEMORY READ AND WRITE AC CHARACTERISTICS
3.3 V ±0.3V
Symbol
t
cR
t
a(A)
t
a(CE)
t
a(OE)
t
dis(CE)
t
dis(OE)
t
en(CE)
t
en(OE)
t
v(A)
t
su(A)
t
h(A)
t
su(CE)
t
h(CE)
t
cW
t
w(WE)
t
su(A-WEH)
t
su(CE-WEH)
t
su(D-WEH)
t
h(D)
t
dis(WE)
t
en(WE)
t
su(OE-WE)
t
h(OE-WE)
Parameter
Read Cycle Time
Address Access Time
Card Enable Access Time
Output Enable Access Time
Output Disable time from CE#
Output Disable time from OE#
Output Enable time from CE#
Output Enable time from OE#
Data valid time from address change
Address Setup Time
Address Hold Time
Card Enable Setup Time
Card Enable Hold Time
Write Cycle Time
Write Pulse TIme
Address setup time for WE#
Card Enable setup time for WE#
Data setup time for WE#
Data hold time
Output disable time from WE#
Output enable time from WE#
Output Enable setup time for WE#
Output Enable hold time from WE#
Min
250
—
—
—
—
—
5
5
0
30
20
0
20
250
150
30
30
80
30
—
5
10
10
Max
—
250
250
125
100
100
—
—
—
—
—
—
—
—
—
—
—
—
—
100
—
—
—
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
November 2009
Rev. 1
© 2010 White Electronic Designs Corp. All rights reserved
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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