BZW50
Transil™, transient voltage surge suppressor (TVS)
Datasheet
production data
Features
■
■
■
■
■
■
Peak pulse power: 5000 W (10/1000 µs)
Stand-off voltage range from 10 V to 180 V
Unidirectional and bidirectional types
Low clamping factor
Fast response time
UL497B, file number: QVGQ2.E136224
R6
Description
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such as
MOS Technology and low voltage supplied ICs.
TM:Transil is a trademarks of STMicroelectronics.
December 2012
This is information on a product in full production.
Doc ID 2973 Rev 5
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www.st.com
8
Characteristics
BZW50
1
Table 1.
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current for unidirectional types
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10 s at 5 mm from case.
T
j initial
= T
amb
T
amb
= 75 °C
t
p
= 10 ms
T
j initial
= T
amb
Value
5000
6.5
500
-65 to + 175
175
260
Unit
W
W
A
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on printed circuit. L
lead
= 10 mm
Value
15
°C/W
65
Unit
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
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Doc ID 2973 Rev 5
BZW50
Table 3.
Electrical characteristics - values (T
amb
= 25 °C)
I
RM
@ V
RM
Order code
max
Unidirectional
BZW50-10
BZW50-12
BZW50-15
BZW50-18
BZW50-22
BZW50-27
BZW50-33
BZW50-39
BZW50-47
BZW50-56
BZW50-68
BZW50-82
BZW50-100
BZW50-120
BZW50-150
BZW50-180
Bidirectional
BZW50-10B
BZW50-12B
BZW50-15B
BZW50-18B
BZW50-22B
BZW50-27B
BZW50-33B
BZW50-39B
BZW50-47B
BZW50-56B
BZW50-68B
BZW50-82B
BZW50-100B
BZW50-120B
BZW50-150B
BZW50-180B
µA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
10
12
15
18
22
27
33
39
47
56
68
82
100
120
150
180
min
V
11.1
13.3
16.6
20
24.4
30
36.6
43.3
52
62.2
75.6
91
111
133
166
200
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
BR
@ I
R(1)
V
CL
@ I
PP
10/1000 µs
max
V
18.8
22
26.9
32.2
39.4
48.3
59
69.4
83.2
99.6
121
145
179
215
269
322
A
266
227
186
155
127
103
85
72
60.1
50
41
34
28
23
19
16
V
CL
@ I
PP
8/20µs
max
V
23.4
28
35
41.5
51
62
76
90
108
129
157
189
228
274
343
410
A
2564
2143
1714
1446
1177
968
789
667
556
465
382
317
263
219
175
146
Characteristics
T
(2)
max
10
-4
/ °C
7.8
8.4
8.8
9.2
9.6
9.8
10
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
C
(3)
typ
pF
24000
18500
13500
11500
8500
7000
5750
4800
4100
3400
3000
2600
2300
1900
1700
1500
1. Pulse test: t
p
< 50 ms.
2.
V
BR
=
T
· (T
amb
- 25) · V
BR
(25°C).
3. V
R
= 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2.
Doc ID 2973 Rev 5
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Characteristics
BZW50
Figure 3.
Peak power dissipation vs. initial
junction temperature
(printed circuit board)
Figure 4.
Peak pulse power vs. exponential
pulse duration
%
Ppp (W)
1E7
100
1E6
Tj initial(°C)
80
1E5
60
40
20
Tj initial(°C)
1E4
1E3
0
0
20
40
60
80 100 120 140 160 180 200
1E2
0.001
0.01
0.1
1
tp(ms)EXPO.
10
100
Figure 5.
Clamping voltage vs. peak pulse
current
(1)
Figure 6.
Capacitance vs. reverse applied
voltage for unidirectional types
(typical values).
V (V)
CL
1000
% Ipp
100
50
C (nF)
100
Tj initial(°C)
BZW50-180
0
tr
tp
t r < 10
s
t
B ZW 5
0 - 10
10
B ZW 5
0-18
B ZW 5
0-39
B ZW 5
0-82
B ZW 5
0 - 18 0
Tj= 25 °C
F = 1 MHz
BZW50- 82
100
BZW50- 82
39
1
BZW50- 12
18
BZW50- 12
10
10
0.1
1
10
100
1000
Ipp (A)
10000
V R (V)
0.1
1
10
100
500
1. The curves in
Figure 5
are specified for a junction temperature of 25 °C before surge. The given results may be
extrapolated for other junction temperatures by using the following formula:
V
BR
=
T
x [T
amb
-25] x V
BR
(25 °C)
For intermediate voltages, extrapolate the given results.
Figure 7.
Capacitance vs. reverse applied
voltage for bidirectional types
(typical values)
Figure 8.
Peak forward voltage drop vs. peak
forward current for unidirectional
types (typical value).
(1)
C (nF)
100
Tj= 25 °C
F = 1 MHz
10
1
B ZW 5
0-10B
B ZW 5
0-18B
B ZW 5
0-39B
BZW 50-8
2B
B ZW 5
0 - 1 8 0B
V R (V)
0.1
1
10
100
500
1. Multiply by 2 for units with V
BR
> 220 V.
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Doc ID 2973 Rev 5
BZW50
Ordering information scheme
Figure 9.
Transient thermal impedance
junction to ambient vs. pulse
duration
Figure 10. Relative variation of leakage
current vs. junction temperature
100
Zth (j-a) (°C/W)
10
t
p
(s)
1
0.01
0.1
1
10
100
1000
2
Ordering information scheme
Figure 11. Ordering information scheme
BZW
50
10
CA
RL
Transil
Peak Pulse Power
50 = 5000 W
Breakdown Voltage
100 = 100 V
Types
A = Unidirectional
CA = Bidirectional
Packaging
Blank = Ammopack tape
RL = Tape and reel
Doc ID 2973 Rev 5
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