Known Good Die
FEATURES
Precision, Low Noise, CMOS, Rail-to-Rail,
Input/Output Operational Amplifier
AD8608-KGD
GENERAL DESCRIPTION
The
AD8608-KGD
1
is a single, rail-to-rail input and output,
single-supply amplifier that features very low offset voltage, low
input voltage and current noise, and wide signal bandwidth.
The
AD8608-KGD
uses the Analog Devices, Inc. patented
DigiTrim® trimming technique, which achieves superior
precision without laser trimming.
The combination of low offsets, low noise, very low input bias
currents, and high speed makes this amplifier useful in a
wide variety of applications. Filters, integrators, photodiode
amplifiers, and high impedance sensors all benefit from the
combination of performance features. Audio and other ac
applications benefit from the wide bandwidth and low
distortion. Applications for this amplifier include optical
control loops, portable and loop-powered instrumentation,
and audio amplification for portable devices.
The
AD8608-KGD
is specified over the extended industrial
temperature range (−40°C to +125°C).
Additional application and technical information can be found
in the
AD8605/AD8606/AD8608
data sheet.
Low offset voltage: 65 µV maximum
Low input bias currents: 1 pA maximum
Low noise: 8 nV/√Hz
Wide bandwidth: 10 MHz
High open-loop gain: 1000 V/mV
Unity gain stable
Single-supply operation: 2.7 V to 5.5 V
Known good die (KGD): these die are fully guaranteed to
data sheet specifications
APPLICATIONS
Photodiode amplification
Battery-powered instrumentation
Multipole filters
Sensors
Barcode scanners
Audio
1
Protected by U.S. Patent No. 5,969,657.
Document Feedback
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Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
AD8608-KGD
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
5 V Electrical Specifications ........................................................ 3
2.7 V Electrical Specifications..................................................... 4
Known Good Die
Absolute Maximum Ratings ............................................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions..............................6
Outline Dimensions ..........................................................................7
Die Specifications and Assembly Recommendations ..............7
Ordering Guide .............................................................................7
REVISION HISTORY
4/15—Revision 0: Initial Version
Rev. 0 | Page 2 of 7
Known Good Die
SPECIFICATIONS
5 V ELECTRICAL SPECIFICATIONS
V
S
= 5 V, V
CM
= V
S
/2, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Symbol
V
OS
Conditions
V
S
= 3.5 V, V
CM
= 2.7 V
V
S
= 5 V, V
CM
= 0 V to 5 V
−40°C < T
A
< +125°C
−40°C < T
A
< +125°C
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
INPUT CAPACITANCE
Common-Mode Input Capacitance
Differential Input Capacitance
OUTPUT CHARACTERISTICS
Output Voltage High
I
OS
−40°C < T
A
< +125°C
CMRR
A
VO
ΔV
OS
/ΔT
C
COM
C
DIFF
V
OH
I
L
= 1 mA
I
L
= 10 mA
−40°C < T
A
< +125°C
I
L
= 1 mA
I
L
= 10 mA
−40°C < T
A
< +125°C
f = 1 MHz, A
V
= 1
V
S
= 2.7 V to 5.5 V
−40°C < T
A
< +125°C
I
OUT
= 0 mA
−40°C < T
A
< +125°C
R
L
= 2 kΩ, C
L
= 16 pF
To 0.01%, 0 V to 2 V step, A
V
= 1
77
70
4.96
4.7
4.6
V
CM
= 0 V to 5 V
−40°C < T
A
< +125°C
R
L
= 2 kΩ, V
O
= 0.5 V to 4.5 V
−40°C < T
A
< +125°C
0
85
75
300
100
90
1000
1.5
8.8
2.6
4.98
4.79
20
170
±80
1
92
90
1
0.1
Min
Typ
20
80
0.2
AD8608-KGD
Max
75
300
750
1
300
0.5
75
5
Unit
µV
µV
µV
pA
pA
pA
pA
V
dB
dB
V/mV
µV/°C
pF
pF
V
V
V
mV
mV
mV
mA
Ω
dB
dB
mA
mA
V/µs
µs
MHz
Degrees
Input Bias Current
I
B
6.0
Output Voltage Low
V
OL
40
210
290
Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Unity Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Peak-to-Peak Noise
Voltage Noise Density
Current Noise Density
I
OUT
Z
OUT
PSRR
I
SY
1.2
1.4
SR
t
S
GBP
Φ
M
e
n
p-p
e
n
e
n
i
n
5
<1
10
65
2.3
8
6.5
0.01
3.5
12
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
µV p-p
nV/√Hz
nV/√Hz
pA/√Hz
Rev. 0 | Page 3 of 7
AD8608-KGD
2.7 V ELECTRICAL SPECIFICATIONS
V
S
= 2.7 V, V
CM
= V
S
/2, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Symbol
V
OS
Conditions
V
S
= 3.5 V, V
CM
= 2.7 V
V
S
= 2.7 V, V
CM
= 0 V to 2.7 V
−40°C < T
A
< +125°C
−40°C < T
A
< +125°C
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
INPUT CAPACITANCE
Common-Mode Input Capacitance
Differential Input Capacitance
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Unity Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Peak-to-Peak Noise
Voltage Noise Density
Current Noise Density
I
OS
−40°C < T
A
< +125°C
CMRR
A
VO
ΔV
OS
/ΔT
C
COM
C
DIFF
V
OH
V
OL
I
OUT
Z
OUT
PSRR
I
SY
I
L
= 1 mA
−40°C < T
A
< +125°C
I
L
= 1 mA
−40°C < T
A
< +125°C
f = 1 MHz, A
V
= 1
V
S
= 2.7 V to 5.5 V
−40°C < T
A
< +125°C
I
OUT
= 0 mA
−40°C < T
A
< +125°C
R
L
= 2 kΩ, C
L
= 16 pF
To 0.01%, 0 V to 1 V step, A
V
= 1
77
70
2.6
2.6
V
CM
= 0 V to 2.7 V
−40°C < T
A
< +125°C
R
L
= 2 kΩ, V
O
= 0.5 V to 2.2 V
−40°C < T
A
< +125°C
0
80
70
110
Min
Known Good Die
Typ
20
80
0.2
0.1
Max
75
300
750
1
300
0.5
75
2.7
Unit
Input Bias Current
I
B
95
85
350
1.5
8.8
2.6
2.66
25
±30
1.2
92
90
1.15
6.0
µV
µV
pA
pA
pA
pA
V
dB
dB
V/mV
µV/°C
pF
pF
V
V
mV
mV
mA
Ω
dB
dB
mA
mA
V/µs
µs
MHz
Degrees
40
50
1.4
1.5
SR
t
S
GBP
Φ
M
e
n
p-p
e
n
e
n
i
n
5
<0.5
9
50
2.3
8
6.5
0.01
3.5
12
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
µV p-p
nV/√Hz
nV/√Hz
pA/√Hz
Rev. 0 | Page 4 of 7
Known Good Die
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage
Output Short-Circuit Duration to GND
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Rating
6V
GND to V
S
6V
Observe Derating Curves
−65°C to +150°C
−40°C to +125°C
−65°C to +150°C
AD8608-KGD
ESD CAUTION
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. 0 | Page 5 of 7
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