SMCG6036 thru SMCG6072A, e3
and SMCJ6036 thru SMCJ6072A, e3
Bidirectional Transient Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
These surface mount Transient Voltage Suppressors (TVSs) are electrically equivalent to
the 1N6036 thru 1N6072A JEDEC registered axial-leaded devices. They are are used for
protecting sensitive components requiring low clamping voltage levels and are also
available as RoHS Compliant with an e3 suffix. They are rated at high current impulses
typically generated by inductive switching transients. Other benefits are achieved with
low-profile surface mount J-bend or Gull-wing terminals for stress-relief and lower weight.
Its low-flat profile provides easier insertion or automatic handling benefits compared to
other MELF style packages. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP prefixes respectively for part numbers and
high reliability screening in accordance with MIL-PRF-19500/507.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
•
Thermally efficient surface mount with J-bends or Gull
wing terminations for stress relief (flat handling surface
and easier placement)
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for added
o
o
100% temperature cycle -55 C to +125 C (10X) as well
as surge (3X) and 24 hours HTRB with post test V
BR
&
I
D
(both directions for bidirectional)
Options for screening in accordance with MIL-PRF-
19500/507 for JAN, JANTX, and JANTXV are available
by adding MQ, MX, or MV prefixes to part numbers
respectively. For example, designate a MXSMCJ6036A
for a JANTX screen.
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
•
Working Standoff Voltages: 5.5 volts to 185 volts
•
Metallurgically bonded
•
For high reliability transient voltage suppression in
low profile surface mount locations requiring easy
placement and strain relief
•
Light weight for airborne or satellite applications
•
Superior surge quality to protect from ESD and EFT
transients per IEC61000-4-2 and -4-4
•
Lightning surge protection per IEC61000-4-5 for Class
1 and 2 with source impedance of 42 Ohms as well as
Class 3 and 4 selectively at lower voltages (V
WM
) and
higher surge current (I
PP
) ratings herein
•
•
•
•
Protects sensitive components such as ICs, CMOS,
Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
MAXIMUM RATINGS
•
•
•
•
•
•
•
•
Operating temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
1500 Watts of Peak Pulse Power at 10/1000 µs as
shown in Figure 3 (see Figure 1 for other t
P
values)
Thermal resistance, R
θJL
= 20°C/W
Impulse repetition rate (duty factor): 0.01%
5.0 Watt steady-state maximum power at T
L
=25°C
t
clamping
(0V to V
(BR)
min): less than 5 ns
Solder temperatures: 260 °C for 10 s (maximum)
MECHANICAL AND PACKAGING
•
Molded epoxy package meets UL94V-0
•
Terminals: Gullwing or C-bend (modified J-bend)
leads, tin-lead or RoHS compliant annealed matte-tin
plating solderable to MIL-STD-750, method 2026
•
Body marked with P/N without SMCJ or SMCG (e.g.
6036A, 6036Ae3, MA6036A, 6039, 6053, 6053e3, etc.)
•
No polarity band is shown on these bi-directional types
•
Weight: 0.25 grams (approximate)
•
Tape & Reel packaging per EIA-481 (2500 units/reel)
Maximum
Clamping
Voltage
@ I
PP
(10/1000 µs)
V
C
Volts
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
ELECTRICAL CHARACTERISTICS @ 25
o
C (Test Both Polarities)
MICROSEMI
Part Number
Modified
“G”
Bend Lead
SMCG6036
SMCG6036A
SMCG6037
SMCG6037A
SMCG6038
SMCG6038A
SMCG6039
SMCG6039A
SMCG6040
SMCG6040A
SMCG6041
SMCG6041A
MICROSEMI
Part Number
Modified
“J”
Bend Lead
SMCJ6036
SMCJ6036A
SMCJ6037
SMCJ6037A
SMCJ6038
SMCJ6038A
SMCJ6039
SMCJ6039A
SMCJ6040
SMCJ6040A
SMCJ6041
SMCJ6041A
Rated
Stand-off
Voltage
(Note 1)
V
WM
Volts
5.5
6.0
6.5
7.0
7.0
7.5
8.0
8.5
8.5
9.0
9.0
10.0
Maximum
Standby
Current
@ V
WM
I
D
μA
1000
1000
500
500
200
200
50
50
10
10
5
5
Maximum
Peak Pulse
Current
(Fig. 2)
I
PP
A
128
132
120
124
109
112
100
103
93
96
87
90
Maximum
Temperature
Coefficient
of V
(BR)
α
V(BR)
%/
o
C
.061
.061
.065
.065
.068
.068
.073
.073
.075
.075
.078
.078
Breakdown
Voltage*
V
(BR)
@
Volts
6.75 - 8.25
7.13 - 7.88
7.38 - 9.02
7.79 - 8.61
8.19 - 10.00
8.65 - 9.55
9.0 - 11.0
9.5 - 10.5
9.9 - 12.1
10.5 - 11.6
10.8 - 13.2
11.4 - 12.6
SMCG/J6036 thru
SMCG/J6072A, e3
I
(BR)
mA
10
10
10
10
10
10
1
1
1
1
1
1
Copyright
©
2007
6-21-2007 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
