250 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250 mA, 600 V, N沟道, 硅, 小信号, 场效应管
参数名称 | 属性值 |
端子数量 | 4 |
最小击穿电压 | 600 V |
加工封装描述 | SOT-223, 4 PIN |
无铅 | Yes |
欧盟RoHS规范 | Yes |
状态 | ACTIVE |
包装形状 | RECTANGULAR |
包装尺寸 | SMALL OUTLINE |
表面贴装 | Yes |
端子形式 | GULL WING |
端子涂层 | MATTE TIN |
端子位置 | DUAL |
包装材料 | PLASTIC/EPOXY |
结构 | SINGLE WITH BUILT-IN DIODE |
壳体连接 | DRAIN |
元件数量 | 1 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
通道类型 | N-CHANNEL |
场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR |
操作模式 | ENHANCEMENT |
晶体管类型 | GENERAL PURPOSE SMALL SIGNAL |
最大漏电流 | 0.2500 A |
最大漏极导通电阻 | 15 ohm |
STN1NK60Z | STD1LNK60Z-1_06 | STD1LNK60Z-1 | STQ1NK60ZR | D1LNK60Z | Q1NK60ZR | |
---|---|---|---|---|---|---|
描述 | 250 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 250 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 250 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 250 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 250 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 250 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
端子数量 | 4 | 4 | 4 | 4 | 4 | 4 |
最小击穿电压 | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
加工封装描述 | SOT-223, 4 PIN | SOT-223, 4 PIN | SOT-223, 4 PIN | SOT-223, 4 PIN | SOT-223, 4 PIN | SOT-223, 4 PIN |
无铅 | Yes | Yes | Yes | Yes | Yes | Yes |
欧盟RoHS规范 | Yes | Yes | Yes | Yes | Yes | Yes |
状态 | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
包装尺寸 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
表面贴装 | Yes | Yes | Yes | Yes | Yes | Yes |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子涂层 | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
结构 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
壳体连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
通道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
操作模式 | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT |
晶体管类型 | GENERAL PURPOSE SMALL SIGNAL | GENERAL PURPOSE SMALL SIGNAL | GENERAL PURPOSE SMALL SIGNAL | GENERAL PURPOSE SMALL SIGNAL | GENERAL PURPOSE SMALL SIGNAL | GENERAL PURPOSE SMALL SIGNAL |
最大漏电流 | 0.2500 A | 0.2500 A | 0.2500 A | 0.2500 A | 0.2500 A | 0.2500 A |
最大漏极导通电阻 | 15 ohm | 15 ohm | 15 ohm | 15 ohm | 15 ohm | 15 ohm |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved