Bulletin I27303 01/07
GB30RF60K
IGBT PIM MODULE
Features
•
•
•
•
Low V
CE
(on) Non Punch Through IGBT Technology
Low Diode V
F
10μs Short Circuit Capability
Square RBSOA
V
CES
= 600V
I
C
= 27A @ T
C
=80°C
t
sc
> 10μs @ T
J
=150°C
ECONO2 PIM
V
CE(on)
typ. = 2.04V
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive V
CE
(on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE
Benefits
• Benchmark Efficiency for Motor Control
•
•
•
•
•
Rugged Transient Performance
Low EMI, Requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Low Junction to Case Thermal Resistance
23
R
24
Absolute Maximum Ratings
Parameter
Inverter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Diode Maximum Forward Current
Power Dissipation
Input Rectifier
Repetitive Peak Reverse Voltage
Average
Output Current
Surge Current (Non Repetitive)
I
2
t (Non Repetitive)
Brake
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Symbol
V
CES
V
GES
I
C
I
CM
I
FM
P
D
V
RRM
I
F(AV)
I
FSM
I
2
t
V
CES
V
GES
I
C
I
CM
P
D
V
RRM
T
J
T
STG
V
ISOL
Test Conditions
Ratings
600
±20
Units
V
A
Continuos
Pulsed
One IGBT
50/60Hz sine pulse
sine pulse
25°C / 80°C
25°C
25°C
25°C
80°C
50 / 27
100
100
129
800
30
310
525
600
±20
W
V
A
A
2
s
V
A
W
V
°C
V
Rated V
RRM
applied, 10ms,
Continuous
Pulsed
One IGBT
25°C / 80°C
25°C
25°C
30 / 20
60
100
600
150
-40 to +125
AC (1 min)
2500
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake DIODE Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
R
θCS
R
θJC
Symbol
Min
-
-
-
-
-
-
2.7
Typical
-
-
-
-
-
0.05
-
170
Maximum
0.97
1.42
2.44
1.25
1.03
-
3.3
Units
°C/W
Nm
g
Document Number: 94479
www.vishay.com
1
GB30RF60K
Bulletin I27303 01/07
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Inverter
IGBT
BV
(CES)
V
CE(ON)
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Min. Typ. Max. Units Conditions
600
-
-
V
V
GE
= 0 I
C
= 500μA
-
-
-
-
-
V
GE
(th)
I
CES
I
GES
Q
G
Q
GE
Q
GC
E
ON
E
OFF
E
TOT
E
ON
E
OFF
E
TOT
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ΔV
GE
(th)/ΔT
J
Thresold Voltage temp. coefficient
0.7
2.04
2.60
2.31
3.01
-
-10
-
400
-
105
14
51
491
223
714
613
417
132
33
153
88
459
54
-
2.65
3.62
2.80
2.77
5.5
-
100
-
±200
158
21
76
737
335
1072
920
626
198
50
229
132
pF
V
GE
= 0
V
CC
= 30V
f = 1Mhz
Tj = 150°C I
C
= 60A
R
G
= 22Ω V
GE
= 15V to 0
10
-
-
μs
I
P
= 220A to 310A
V
CC
= 300V
R
G
= 47Ω
Inverter
Diode
I
rr
Diode Peak Rev. Recovery Current
-
43
-
A
Tj = 125°C
V
CC
= 300V I
F
= 30A L = 200μH
V
GE
= 15V R
G
= 22Ω
V
FM
Diode Forward Voltage Drop
-
-
-
-
1.31
1.52
1.25
1.47
1.81
2.40
1.68
2.14
V
I
F
= 30A
I
F
= 50A
I
F
= 30A Tj = 125°C
I
F
= 50A Tj = 125°C
V
GE
= 15V to 0
690
81
ns
μJ
μJ
nC
nA
mV/°C
μA
V/°C
V
V
GE
= 0
I
C
= 1mA (25°C - 125°C)
I
C
= 30A V
GE
= 15V
I
C
= 50A V
GE
= 15V
I
C
= 30A V
GE
= 15V T
J
= 125°C
I
C
= 50A V
GE
= 15V T
J
= 125°C
V
CE
= V
GE
I
C
= 250μA
V
CE
= V
GE
I
C
= 1mA (25°C-125°C)
V
GE
= 0 V
CE =
600V
V
GE
= 0 V
CE =
600V Tj = 125°C
V
GE
= ±20V
I
C
= 30A
V
CC
= 300V
V
GE
= 15V
I
C
= 30A V
CC
= 300V
V
GE
= 15V R
G
= 22Ω L = 200μH
Tj = 25°C
1
ΔV
(BR)CES
/ΔT
J
Temp. Coefficient of Breakdown Voltage
I
C
= 30A V
CC
= 300V
V
GE
= 15V R
G
= 22Ω L = 200μH
Tj = 125°C
1
1030 1546
I
C
= 30A V
CC
= 300V
V
GE
= 15V R
G
= 22Ω L = 200μH
Tj = 125°C
1834 2751
FULL SQUARE
Document Number: 94479
www.vishay.com
2
GB30RF60K
Bulletin I27303 01/07
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Input
Rectifier
V
FM
I
RM
r
T
V
F(TO)
Brake
IGBT
BV
(CES)
V
CE(ON)
Parameter
Maximum Forward Voltage Drop
Maximum Reverse Leakage Current
Forward Slope Resistance
Conduction Thresold Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Min. Typ. Max. Units Conditions
-
-
1.50
V
I
F
= 30A
-
-
-
-
600
-
-
-
-
-
V
GE
(th)
ΔV
GE
(th)/ΔT
J
I
CES
I
GES
Q
G
Q
GE
Q
GC
E
ON
E
OFF
E
TOT
E
ON
E
OFF
E
TOT
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Gate Threshold Voltage
Thresold Voltage temp. coefficient
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.8
0.79
-
0.6
2.07
2.51
2.49
3.06
-
-10
-
250
-
48
11
30
176
137
313
235
276
512
87
24
112
115
901
263
29
0.2
1
-
-
-
-
2.24
2.71
2.72
3.47
6
-
100
-
±200
72
16
44
264
207
471
353
416
768
131
36
169
172
1352
395
44
pF
V
GE
= 0
V
CC
= 30V
f = 1Mhz
Tj = 150°C I
C
= 20A
R
G
= 22Ω V
GE
= 15V to 0
10
-
-
μs
I
P
= 180A to 280A
V
CC
= 300V
R
G
= 47Ω
Brake
Diode
V
FM
Diode Forward Voltage Drop
-
-
-
-
NTC
R
B
1
mA
mΩ
V
V
V/°C
V
Tj = 25°C V
R =
800V
Tj = 150°C V
R =
800V
Tj = 150°C
V
GE
= 0 I
C
= 500μA
V
GE
= 0 I
C
= 1mA (25°C - 125°C)
I
C
= 20A V
GE
= 15V
I
C
= 30A V
GE
= 15V
I
C
= 20A V
GE
= 15V T
J
= 125°C
I
C
=30A V
GE
= 15V T
J
= 125°C
V
CE
= V
GE
I
C
= 250μA
ΔV
(BR)CES
/ΔT
J
Temp. Coefficient of Breakdown Voltage
mV/°C
μA
nA
nC
μJ
V
CE
= V
GE
I
C
= 1mA (25°C-125°C)
V
GE
= 0 V
CE =
600V
V
GE
= 0 V
CE =
600V Tj = 125°C
V
GE
= ±20V
I
C
= 15A
V
CC
= 300V
V
GE
= 15V
I
C
= 15A V
CC
= 300V
V
GE
= 15V R
G
= 22Ω L = 200μH
Tj = 25°C
1
μJ
I
C
= 15A V
CC
= 300V
V
GE
= 15V R
G
= 22Ω L = 200μH
Tj = 125°C
1
ns
I
C
= 15A V
CC
= 300V
V
GE
= 15V R
G
= 22Ω L = 200μH
Tj = 125°C
FULL SQUARE
V
GE
= 15V to 0
I
rr
Diode Peak Rev. Recovery Current
-
28
1.61
1.79
1.57
1.73
5000
4933
3375
-
1.71
1.99
1.66
1.83
-
-
-
A
V
V
CC
= 300V I
F
= 15A L = 200μH
V
GE
= 15V to 0 R
G
= 22Ω
I
F
= 20A
I
F
= 30A
I
F
= 20A Tj = 125°C
I
F
= 30A Tj = 125°C
Resistance
B Value
-
-
-
Ω
K
Tj = 25°C
Tj = 100°C
Tj = 25°C / 50°C
Energy Losses include "tail" and diode reverse recovery
Document Number: 94479
www.vishay.com
3
GB30RF60K
Bulletin I27303 01/07
60
50
40
30
20
10
0
0
1
2
3
Vce (V)
4
5
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Inverter
90
75
60
45
30
15
0
0
2
Vce (V)
4
6
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Ice (A)
Ice (A)
Fig. 1
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
Fig. 2
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80μs
20
400
Tj = 25°C
Tj = 125°C
300
Ice (A)
15
Vce (V)
I
ce=15A
I
ce=30A
I
ce=60A
200
10
100
5
0
0
6
9
12
15
Vge (V)
Fig. 3
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
3
0
5
15
Vge (V)
Fig. 4
- Typical V
CE
vs. V
GE
T
J
= 25°C
10
20
20
16
12
8
4
0
5
10
Vge (V)
15
20
10000
Capacitance (pF)
I
ce=15A
I
ce=30A
I
ce=60A
Cies
1000
Coes
100
Cres
Vce (V)
10
0
20
40
60
Vce (V)
80
100
Fig.5
- Typical V
CE
vs. V
GE
T
J
= 125°C
Document Number: 94479
Fig. 6-
Typ. Capacitance vs. V
CE
V
GE
= 0; f = 1MHz
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4
GB30RF60K
Inverter
16
14
12
10
V
GE
(V)
8
6
4
2
0
0
20
40
60
80 100
Q
G
, Total Gate Charge (nC)
120
15
0
0
0.5
1
Vf (V)
1.5
2
90
Bulletin I27303 01/07
300V
75
60
If (A)
45
30
Tj = 25°C
Tj = 125°C
Fig. 7
- Typical Gate Charge vs. V
GE
I
CE
= 30A
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
1.6
E
TOT
1.2
Energy (mJ)
E
ON
E
OFF
0.4
Swiching Time (µs)
1
td
OFF
t
F
td
ON
t
R
0.1
0.8
0
30
40
50
60
Ic (A)
Fig. 9
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L=200μH; V
CE
= 300V,R
G
= 22Ω; V
GE
= 15V
1.2
0.01
10
20
45
55
65
Ic (A)
Fig. 10
- Typ. Switching Time vs. I
C
T
J
= 125°C; L=200μH; V
CE
= 300V,R
G
= 22Ω;V
GE
= 15V
1
25
35
E (TOT)
Swiching Time (µs)
1
Energy (mJ)
0.8
td
OFF
0.1
t
F
td
ON
t
R
0.6
E (ON)
0.4
E (OFF)
0.2
0
10
20
30
40
50
0.01
20
30
40
50
Rg (
Ω
)
Fig. 12-
Typ. Switching Time vs. R
G
T
J
= 125°C; L=200μH; V
CE
= 300V, I
CE
= 30A; V
GE
= 15V
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5
0
10
Rg (Ω)
Ω
Fig. 11
- Typ. Energy Loss vs. R
G
T
J
= 125°C; L=200μH; V
CE
= 300V, I
CE
= 30A; V
GE
= 15V
Document Number: 94479
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