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SB16100F

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 100V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN
产品类别分立半导体    二极管   
文件大小44KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
下载文档 详细参数 全文预览

SB16100F概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 100V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN

SB16100F规格参数

参数名称属性值
包装说明R-PSFM-T2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.85 V
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流16 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压100 V
最大反向电流500 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
Base Number Matches1

文档预览

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®
SB1620F – SB16100F
16A SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
C
G
PIN1
3
B
Dim
A
ITO-220A
Min
14.60
9.70
2.55
13.00
0.30
3.00 Ø
6.30
4.20
2.50
0.36
2.60
4.83
Max
15.40
10.30
2.85
4.16
13.80
0.90
3.50 Ø
6.90
4.80
2.90
0.80
3.30
5.33
A
B
C
D
E
F
D
F
P
I
H
L
E
Mechanical Data
Case: ITO-220A, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.9 grams (approx.)
Mounting Position: Any
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
G
H
I
J
K
L
P
All Dimensions in mm
PIN 1
J
K
PIN 3
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
SB
1620F 1630F 1640F 1645F 1650F 1660F 1680F
16100F
20
14
30
21
40
28
45
32
16
150
0.63
0.57
0.5
20
500
75
4.0
1500
-55 to +150
350
0.75
0.65
0.85
0.75
50
35
60
42
80
56
100
70
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward Voltage
@I
F
= 16A, T
J
= 25°C
@I
F
= 16A, T
J
= 125°C
@T
J
= 25°C
@T
J
= 100°C
V
FM
I
RM
C
J
R
θJA
R
θJC
V
ISO
T
J
, T
STG
V
mA
pF
°C/W
V
°C
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
RMS Isolation Voltage, t = 1 min
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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