SB860
Technical Data
Data Sheet N0872, Rev.A
SB860 SCHOTTKY RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DO-201AD
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Disk drives
Battery charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @T
C
=105°C,
rectangular wave form
8.3 ms, half Sine pulse, T
C
=25°C
Max.
60
8
180
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Junction Capacitance
Voltage Rate of Change
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
dv/dt
Condition
@ 8A, Pulse, T
J
= 25 °C
@ 8A, Pulse, T
J
= 125 °C
@V
R
= Rated V
R
, Pulse, T
J
= 25 °C
@V
R
= Rated V
R
, Pulse, T
J
= 125 °C
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz
-
Typ.
0.68
0.60
0.02
15
170
-
Max.
0.70
0.65
1.0
40
400
10,000
Units
V
V
mA
mA
pF
V/us
* Pulse width < 300 µs, duty cycle < 2%
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SB860
Technical Data
Data Sheet N0872, Rev.A
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case
Approximate Weight
Symbol
T
J
T
stg
R
JC
wt
Condition
-
-
DC operation
-
Specification
-55 to +150
-55 to +150
8
1.02
Units
C
C
C/W
g
Ratings and Characteristics Curves
10000
Junction Capacitance-CT(PF)
100
TJ=125℃
10
Reverse Current-IR(MA
)
1000
TJ=25℃
100
1
0.1
0.01
0.001
TJ=25℃
10
0
5
10
15
20
25
30
35
40
Re ve r s e V oltage -V R(V )
10
20
30
40
50
60
Re ve r s e V o ltag e -V R(V )
Fig.1-Typical Junction Capacitance
Fig.2-Typical Reverse Current
Instantaneous Forward Current-
IF(A)
100
TJ=125℃
10
TJ=25℃
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Forward Voltage Drop-VF(V)
Fig.3-Typical Forward Voltage Drop Characteristics
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SB860
Technical Data
Data Sheet N0872, Rev.A
Mechanical Dimensions DO-201AD
Millimeters
SYMBOL
A
B
C
D
Min.
25.4
8.50
1.2
5.0
Max.
-
9.50
1.3
5.6
Inches
Min.
1.000
0.335
0.048
0.197
Max.
-
0.374
0.052
0.220
Ordering Information
Device
SB860
DO-201AD
(Pb-Free)
Marking Diagram
Shipping
1250pcs / tape
Where XXXXX is YYWWL
SB860
SSG
YY
WW
L
= Part Name
= SSG
= Year
= Week
= Lot Number
Package
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Cautions：Molding resin
Epoxy resin UL:94V-0
Carrier Tape Specification DO-201AD
SYMBOL
A
B
Z
T
E
IL1-L2I
Millimeters
Min.
9.50
50.9
-
5.60
-
-
Max.
10.50
53.9
1.20
6.40
0.80
1.0
China - Germany - Korea - Singapore - United States
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SB860
Technical Data
Data Sheet N0872, Rev.A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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