SB 8100
SCHOTTKY DIE SPECIFICATION
General Description: 100 V 8 A ( Standard
□Low)
VF，
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage:
Ir=1mA(for wafer form)
Ir=0.5mA (for dice form)
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 16 Ampere, Ta=25℃
Maximum Instantaneous Reverse Voltage
@ VR= 103 Volt, Ta=25℃
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
SYM
VRRM
IFAV
VF MAX
TYPE: SB8100
( Single
□Dual)
Anode
Spec. Limit
100
8
0.795
0.765
Die Sort
107
UNIT
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
Tj
TSTG
0.250
0.200
mA
pF
210
125
-50 to +150
Amp
℃
℃
Specification apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
B
Top-side Metal
S
i
O
2
Passivation
A
ITEM
Die Size
Top Metal Pad Size
Thickness (Min)
Thickness (Max)
μm
2234
2090
203
254
Mil
87.95
82.28
8.00
10.00
PS:
(1)Cutting street width is around 50μm (1.96mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
P+ Guard Ring
Back-side Metal
C
DSP 与 ARM 处理器
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