HL6340MG/41MG
Circular Beam Low Operating Current
Description
The HL6340MG/41MG are 0.63
µm
band AlGaInP laser diodes can be operated with low operating current. These
products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
for laser levelers, laser scanners and optical equipment for measurement.
ODE-208-035A (Z)
Rev.1
Feb. 01, 2008
Features
•
•
•
•
•
•
•
Optical output power: 5 mW CW
Single longitudinal mode
Visible light power: 635 nm Typ
Low operating current: 25 mA Typ
Low aspect ratio: 1.2 Typ
Operating temperature: +50°C
TM mode oscillation
Package Type
•
HL6340MG/41MG: MG
Internal Circuit
•
HL6340MG
1
3
Internal Circuit
•
HL6341MG
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Symbol
Optical output power
P
O
Pulse optical output power
P
O(pulse)
LD reverse voltage
V
R(LD)
PD reverse voltage
V
R(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width
≤
1
µs
, duty
≤
50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
—
20
30
mA
—
Slope efficiency
ηs
0.5
0.8
1.1
mW/mA 3 (mW) / (I
(4mW)
– I
(1mW)
)
Operating current
I
OP
—
25
40
mA
P
O
= 5 mW
Operating voltage
V
OP
—
2.4
2.7
V
P
O
= 5 mW
Lasing wavelength
λp
630
635
640
nm
P
O
= 5 mW
Beam divergence
θ//
13
17
25
°
P
O
= 5 mW
parallel to the junction
Beam divergence
θ⊥
16
20
25
°
P
O
= 5 mW
perpendicular to the junction
Aspect ratio
θ⊥/θ//
—
1.2
1.5
—
P
O
= 5 mW
Monitor current
I
S
0.01
0.03
0.06
mA
P
O
= 5 mW, V
R(PD)
= 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as
by ESD.
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a
board.
Rev.1 Feb. 01, 2008 page 1 of 5
HL6340MG/41MG
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan
Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese)
Other area (English)
http://www.opnext.com/jp/products/
http://www.opnext.com/products/
©2008 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 3.0
Rev.1 Feb. 01, 2008 page 5 of 5
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