UNISONIC TECHNOLOGIES CO., LTD
ULB124
NPN EPITAXIAL PLANAR
TRANSISTOR
1
NPN SILICON TRANSISTOR
DESCRIPTION
TO-126
The UTC
ULB124
is designed for high voltage, high speed
switching inductive circuits, and amplifier applications.
FEATURES
1
TO- 251
* High Speed Switching
* Low Saturation Voltage
* High Reliability
1
TO-220
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-K
ULB124G-xx-T60-K
Package
TO-220
TO-251
TO-126
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Bulk
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATING
(T
A
=25°C)
SYMBOL
V
CBO
V
CEO
V
EBO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
NPN SILICON TRANSISTOR
RATINGS
UNIT
600
V
400
V
8
V
DC
2
A
Collector Current
I
C
Pulse
4
A
DC
1
A
Base Current
I
B
Pulse
2
A
TO-220
35
Power Dissipation (T
C
=25°C)
TO-251
P
D
20
W
TO-126
1.4
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified.)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
TEST CONDITIONS
I
C
=1mA
I
C
=10mA
I
E
=1mA
V
CB
=600V
V
EB
=9V, I
C
=0
V
CE
= 5V, I
C
=0.3A
V
CE
= 5V, I
C
=0.5A
V
CE
= 5V, I
C
=1A
I
C
=0.1A, I
B
=10mA
I
C
=0.3A, I
B
=30mA
I
C
=0.1A, I
B
=10mA
I
C
=0.3A, I
B
=30mA
MIN
600
400
8
10
10
10
10
6
40
TYP
MAX
UNIT
V
V
V
µA
µA
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain(Note)
Collector-Emitter Saturation Voltage (Note) V
CE(SAT)
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
0.3
0.8
0.9
1.2
15
V
V
V
V
MHz
SWITCHING CHARACTERISTICS
Gain-Bandwidth Product
f
T
V
CE
=10V, I
C
=0.3A, f=1MHz
Note: Pulse Test : Pulse Width≤380µs, Duty Cycle≤2%
CLASSIFICATION OF h
FE
1
RANK
Range
B1
10 ~ 17
B2
13 ~ 22
B3
18 ~ 27
B4
23 ~ 32
B5
28 ~ 37
B6
33 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Saturation Voltage vs. Collector Current
10000
On Voltage vs. Collector Current
1000
V
CE
= 5V
1000
100
V
BE(SAT)
@I
C
= 10I
B
1
1000
10
100
Collector Current, I
C
(mA)
10000
100
1
1000 10000
10
100
Collector Current (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ULB124
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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