DATA SHEET
MOS FET WITH SCHOTTKY BARRIER DIODE
µ
PA508TE
N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
DESCRIPTION
The
µ
PA508TE is a switching device, which can be driven
directly by a 2.5 V power source.
This device incorporates a MOS FET, which features a low
on-state resistance and excellent switching characteristics,
and a low forward voltage Schottky barrier diode, and is
suitable for applications such as DC/DC converter of
portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
5
4
1.5
0 to 0.1
1
2
3
FEATURES
•
2.5 V drive available (MOS FET)
•
Low on-state resistance (MOS FET)
R
DS(on)1
= 40 mΩ TYP. (V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(on)2
= 42 mΩ TYP. (V
GS
= 4.0 V, I
D
= 1.0 A)
R
DS(on)3
= 59 mΩ TYP. (V
GS
= 2.5 V, I
D
= 1.0 A)
•
Low forward voltage (Schottky barrier diode)
V
F
= 0.35 V TYP. (I
F
= 1.0 A)
1.9
2.9 ±0.2
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95_5p (Mini Mold Thin Type)
★
PIN CONNECTION (Top View)
5
4
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
µ
PA508TE
Marking: ZB
1
2
3
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
±
150 V TYP. (C = 200 pF, R = 0
Ω,
Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16627EJ1V1DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
The mark
★
shows major revised points.
0.4
0.95
0.95
0.65
2003
µ
PA508TE
MOS FET ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
20
±12
±2
±8
0.57
150
V
V
A
A
W
°C
Total Power Dissipation
Channel Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 2500 mm
2
x 1.6 mm, t
≤
5 sec.
SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Note2
Note1
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
30
1
10
+125
−55
to +125
V
A
A
°C
°C
Junction Temperature
Storage Temperature
Notes 1.
Mounted on FR-4 board of 2500 mm
2
x 1.6 mm, t
≤
5 sec
2.
50 Hz sine wave, 1 cycle
2
Data Sheet G16627EJ1V1DS
µ
PA508TE
MOS FET ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Note
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±12
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 1.0 A
V
GS
= 4.5 V, I
D
= 1.0 A
V
GS
= 4.0 V, I
D
= 1.0 A
V
GS
= 2.5 V, I
D
= 1.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 10 V, I
D
= 1.0 A
V
GS
= 4.0 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
1
UNIT
µ
A
µ
A
V
S
±
10
0.5
1.0
1.0
3.3
40
42
59
170
80
40
9
9
15
4
51
57
90
1.5
Forward Transfer Admittance
Drain to Source On-state Resistance
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
= 16 V
V
GS
= 4.0 V
I
D
= 2.0 A
I
F
= 2.0 A, V
GS
= 0 V
2.7
0.6
1.0
0.81
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Forward Voltage
Reverse Current
Terminal Capacitance
SYMBOL
V
F
I
R
C
T
TEST CONDITIONS
I
F
= 1.0 A
V
R
= 10 V
f = 1.0 MHz, V
R
= 10 V
36
MIN.
TYP.
0.35
MAX.
0.38
200
UNIT
V
µ
A
pF
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS
0
10%
I
G
= 2 mA
V
GS
90%
R
L
V
DD
V
DD
PG.
90%
90%
10%
10%
50
Ω
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Data Sheet G16627EJ1V1DS
3
µ
PA508TE
MOS FET TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.7
P
T
- Total Power Dissipation - W
100
0.6
0.5
0.4
0.3
0.2
0.1
0
Mounted on FR-4 board of
2
2500 mm x 1.6 mm
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS(on)
Limited
(at V
GS
= 4.5 V)
10
I
D(DC)
1
PW =
1 ms
10 ms
0.1
Single pulse
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
0.1
1
10
100 ms
5s
I
D(pulse)
I
D
- Drain Current - A
0.01
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
100
10
Single pulse
Mounted on FR-4 board of
2
2500 mm x 1.6 mm
P
D
(FET) : P (SBD) = 1:0
1
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
4
Data Sheet G16627EJ1V1DS
µ
PA508TE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
8
Pulsed
FORWARD TRANSFER CHARACTERISTICS
10
I
D
- Drain Current - A
6
I
D
- Drain Current - A
V
GS
= 4.5 V
4.0 V
2.5 V
4
1
T
A
= 125°C
75°C
25°C
−25°C
0.1
0.01
2
0.001
V
DS
= 10 V
Pulsed
0
0.5
1
1.5
2
2.5
0
0
0.2
0.4
0.6
0.8
0.0001
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
1.2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
V
DS
= 10 V
Pulsed
T
A
=
−25°C
25°C
75°C
125°C
1
V
GS(off)
- Gate Cut-off Voltage - V
1.1
V
DS
= 10 V
I
D
= 1.0 mA
1
0.9
0.8
0.7
0.6
-50
0
50
100
150
0.1
0.01
0.1
1
10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
150
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
I
D
= 1.0 A
Pulsed
100
V
GS
= 2.5 V
4.0 V
4.5 V
50
100
50
0
0.01
0
0
2
4
6
8
0.1
1
10
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
Data Sheet G16627EJ1V1DS
5
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