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CY7C1302DV25_06

产品描述9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture
文件大小462KB,共25页
制造商Cypress(赛普拉斯)
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CY7C1302DV25_06概述

9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture

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CY7C1302DV25
9-Mbit Burst of Two Pipelined SRAMs
with QDR™ Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR™ Architecture
Features
Functional Description
The CY7C1302DV25 is a 2.5 V Synchronous Pipelined SRAM
equipped with QDR™ architecture. QDR architecture consists of
two separate ports to access the memory array. The Read port
has dedicated data outputs to support Read operations and the
Write Port has dedicated data inputs to support Write operations.
Access to each port is accomplished through a common address
bus. The Read address is latched on the rising edge of the
K clock and the Write address is latched on the rising edge of
K clock. QDR has separate data inputs and data outputs to
completely eliminate the need to “turn-around” the data bus
required with common I/O devices. Accesses to the
CY7C1302DV25 Read and Write ports are completely
independent of one another. All accesses are initiated
synchronously on the rising edge of the positive input clock (K).
In order to maximize data throughput, both Read and Write ports
are equipped with DDR interfaces. Therefore, data can be
transferred into the device on every rising edge of both input
clocks (K and K) and out of the device on every rising edge of
the output clock (C and C, or K and K in a single clock domain)
thereby maximizing performance while simplifying system
design. Each address location is associated with two 18-bit
words that burst sequentially into or out of the device.
Depth expansion is accomplished with a Port Select input for
each port. Each Port Select allows each port to operate
independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Separate independent Read and Write data ports
Supports concurrent transactions
167-MHz clock for high bandwidth
2.5 ns Clock-to-Valid access time
2-word burst on all accesses
Double Data Rate (DDR) interfaces on both Read and Write
ports (data transferred at 333 MHz) @ 167 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches.
Single multiplexed address input bus latches address inputs
for both Read and Write ports
Separate Port Selects for depth expansion
Synchronous internally self-timed writes
2.5 V core power supply with HSTL Inputs and Outputs
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Variable drive HSTL output buffers
Expanded HSTL output voltage (1.4 V–1.9 V)
JTAG Interface
Configurations
CY7C1302DV25 – 512 K × 18
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
167 MHz
167
500
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 38-05625 Rev. *J
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 28, 2017

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