VISHAY
BZX384 Series
Vishay Semiconductors
Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener volt-
age tolerance is ± 5 %. Replace "C" with "B" for
± 2 % tolerance. Other voltage tolerances and
other Zener voltages are available upon request.
Mechanical Data
Case:
SOD-323 Plastic Package
Weight:
Approx. 4 mg
Packaging Codes/Options:
D5 / 10k per 13 " reel (8 mm tape), 30k/box
D6 / 3k per 7 " reel (8 mm tape), 30k/box
17431
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
1)
Test condition
Symbol
P
tot
Value
200
1)
Unit
mW
Device on fiberglass substrate
Maximum Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
θJA
T
j
T
S
Value
650
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid that electrodes are kept at ambient temperature
Document Number 85764
Rev. 2, 10-Jul-03
www.vishay.com
1
BZX384 Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Mar- Zener Voltage
king
Range
(1)
Code
V
Z
@ I
ZT
V
min
BZX384C1V8
BZX384C2V0
BZX384C2V2
BZX384C2V4
BZX384C2V7
BZX384C3
BZX384C3V3
BZX384C3V6
BZX384C3V9
BZX384C4V3
BZX384C4V7
BZX384C5V1
BZX384C5V6
BZX384C6V2
BZX384C6V8
BZX384C7V5
BZX384C8V2
BZX384C9V1
BZX384C10
BZX384C11
BZX384C12
BZX384C13
BZX384C15
BZX384C16
BZX384C18
BZX384C20
BZX384C22
BZX384C24
BZX384C27
BZX384C30
BZX384C33
BZX384C36
BZX384C39
BZX384C43
BZX384C47
BZX384C51
BZX384C56
BZX384C62
BZX384C68
BZX384C75
(1)
VISHAY
Dynamic
Resistance
r
zj
@ I
ZT1
Ω
Temperature
Coefficient of
Zener Voltage
α
VZ
@ I
ZT1
10
-4
/°C
min
max
-4
-4
-4
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
-9
-9
-9
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
Test
Cur-
rent
I
ZT1
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Dynamic
Resistance
r
zj
@ I
ZT2
Ω
< 600
< 600
< 600
275
300 (≤600)
325 (≤600)
350 (≤600)
375 (≤600)
400 (≤600)
410 (≤600)
425 (≤500)
400 (≤480)
80 (≤400)
40 (≤150)
30 (≤80)
30 (≤80)
40 (≤80)
40 (≤100)
50 (≤150)
50 (≤150)
50 (≤150)
50 (≤170)
50 (≤200)
50 (≤200)
50 (≤225)
60 (≤225)
60 (≤250)
60 (≤250)
65 (≤300)
70 (≤300)
75 (≤325)
80 (≤350)
80 (≤350)
85 (≤375)
85 (≤375)
85 (≤400)
100 (≤425)
100 (≤450)
150 (≤475)
170 (≤500)
Test
Cur-
rent
I
ZT2
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse Leakage
Current
I
R
µA
<120
<120
<120
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
R
V
0.5
0.5
0.7
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
0.7V
Znom.
max
2
2.2
2.4
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
<100
<100
<100
70 (≤100)
75 (≤100)
80 (≤95)
85 (≤95)
85 (≤90)
85 (≤90)
80 (≤90)
50 (≤80)
40 (≤60)
15 (≤40)
6.0 (≤10)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
8.0 (≤20)
10 (≤20)
10 (≤25)
10 (≤30)
10 (≤30)
10 (≤40)
10 (≤45)
15 (≤55)
20 (≤55)
25 (≤70)
25 (≤80)
30 (≤80)
35 (≤80)
35 (≤90)
40 (≤130)
45 (≤150)
50 (≤170)
60 (≤180)
70 (≤200)
80 (≤215)
90 (≤240)
95 (≤255)
TBD
TBD
TBD
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
1.7
1.9
2.1
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Measured with pulses t
p
= 5 ms
www.vishay.com
2
Document Number 85764
Rev. 2, 10-Jul-03
VISHAY
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
BZX384 Series
Vishay Semiconductors
18114
18117
Figure 1. Forward characteristics
Figure 4. Dynamic Resistance vs. Zener Current
250
200
150
100
50
18192
18193
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°
C
18116
18119
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85764
Rev. 2, 10-Jul-03
www.vishay.com
3
BZX384 Series
Vishay Semiconductors
VISHAY
°C
18120
18135
, =
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature dependence of Zener voltage versus
Zener voltage
°C/W
18121
18124
Figure 8. Thermal differential resistance versus Zener voltage
Figure 11. Change of Zener voltage versus junction temperature
18122
18194
Figure 9. Dynamic resistance versus Zener voltage
Figure 12. Change of Zener voltage versus junction temperature
www.vishay.com
4
Document Number 85764
Rev. 2, 10-Jul-03
VISHAY
BZX384 Series
Vishay Semiconductors
ı
C
18195
Figure 13. Temperature dependence of Zener voltage versus
Zener voltage
18196
Figure 14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium versus Zener voltage
18160
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium versus Zener voltage
Document Number 85764
Rev. 2, 10-Jul-03
www.vishay.com
5
stm32/stm8
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