UG8AT-DT, UGF8AT-DT, UGB8AT-DT
Vishay Semiconductors
formerly General Semiconductor
Ultrafast Rectifier
Reverse Voltage
50 to 200 V
Forward Current
8.0 A
Reverse Recovery Time
20 ns
ITO-220AC (UGF8AT-DT)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
TO-220AC (UG8AT-DT)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
CASE
1
0.185 (4.70)
0.175 (4.44)
DIA.
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
PIN 1
PIN 2
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 2
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
TO-263AB (UGB8AT-DT)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
K - HEATSINK
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.360 (9.14)
0.320 (8.13)
Dimensions in inches
and (millimeters)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High reverse energy capability
• Excellent high temperature switching
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Glass passivated chip junction
Mechanical Data
Case:
JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
Document Number 88765
17-Sep-03
www.vishay.com
1
UG8AT-DT, UGF8AT-DT, UGB8AT-DT
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
ISOL
UG8AT
50
35
50
UG8BT
100
70
100
8.0
150
UG8CT
150
105
150
UG8DT
200
140
200
Unit
V
V
V
A
A
°C
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
C
= 100°C
Operating junction and storage temperature range
RMS Isolation voltage (UGF type only) from terminals to
heatsink with t = 1.0 second, RH
≤
30%
–55 to +150
4500
(NOTE 1)
3500
(NOTE 2)
1500
(NOTE 3)
Electrical Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
V
F
UG8AT
UG8BT
1.0
1.2
0.95
10
300
20
30
50
20
45
45
UG8CT
UG8DT
Unit
V
µA
ns
ns
nC
pF
Maximum instantaneous forward voltage at 8.0
20A
5.0A,T
J
= 150°C
(NOTE 4)
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Maximum reverse recovery time at
I
F
=8.0A, V
R
=30V, di/dt=50A/µs, I
rr
=10% I
RM
Maximum recovered stored charged at
I
F
=8.0A, V
R
=30V, di/dt=50A/µs
Typical junction capacitance at 4.0V, 1MHz
T
J
=25°C
T
J
=100°C
T
J
=25°C
T
J
=100°C
T
J
=25°C
T
J
=100°C
I
R
t
rr
t
rr
Q
rr
C
J
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
R
ΘJC
UG8AT
4.0
UGF8AT
5.0
UGB8AT
4.0
Unit
°C/W
Typical thermal resistance from junction to case
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88765
17-Sep-03
UG8AT-DT, UGF8AT-DT, UGB8AT-DT
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Derating Curve
12
1000
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
T
C
= 100°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
Resistive or Inductive Load
10
8.0
6.0
100
4.0
2.0
0
0
25
50
75
100
125
150
175
10
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Instantaneous Reverse Leakage Current
(µA)
100
1,000
Fig. 4 – Typical Reverse
Characteristics
T
J
= 125°C
T
J
= 100°C
Instantaneous Forward Current (A)
100
10
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
10
1
1
T
J
= 25°C
0.1
0.1
0.01
0.4
0.01
0
20
40
60
80
100
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Reverse Switching
Characteristics
60
100
I
F
= 4.0A
V
R
= 30V
50
di/dt = 150A/µs
di/dt = 100A/µs
20A/µs
50A/µs
100A/µs
50A/µs
150A/µs
20
20A/µs
10
trr
Qrr
0
0
25
50
75
100
125
150
175
Fig. 6 – Typical Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
Recovered Store Charge/Reverse
Recovery Time (nC/ns)
40
30
Junction Capacitance (pF)
10
1
0.1
1
10
100
Junction Temperature (°C)
Document Number 88765
17-Sep-03
Reverse Voltage (V)
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