TS921
Rail-to-rail high output current single operational amplifier
Datasheet
−
production data
Features
■
■
■
■
■
■
■
■
■
Rail-to-rail input and output
Low noise: 9 nV/√Hz
Low distortion
High output current: 80 mA (able to drive 32
Ω
loads)
High-speed: 4 MHz, 1 V/
μ
s
Operating from 2.7 V to 12 V
ESD internal protection: 1.5 kV
Latch-up immunity
Macromodel included in this specification
D
SO-8
(plastic micropackage)
N
DIP8
(plastic package)
Applications
■
■
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■
■
■
■
Headphone amplifier
Piezoelectric speaker driver
Sound cards, multimedia systems
Line driver, actuator driver
Servo amplifier
Mobile phone and portable communication
sets
Instrumentation with low noise as key factor
P
TSSOP8
(thin shrink small outline package)
Pin connections (top view)
Table 1.
Device summary
Temperature
range
-40 °C, +125 °C
Package
DIP8
SO-8
TSSOP8
(thin shrink outline package)
Packing
Tube
Tube or tape and reel
921I
Tape and reel
Marking
TS921IN
Order code
TS921IN
TS921ID/IDT
TS921IPT
September 2012
This is information on a product in full production.
Doc ID 5560 Rev 4
1/16
www.st.com
16
Description
TS921
1
Description
The TS921 device is a rail-to-rail single BiCMOS operational amplifier optimized and fully
specified for 3 V and 5 V operation.
Its high output current allows low load impedances to be driven.
The TS921 device exhibits very low noise, low distortion and low offset. It has a high output
current capability which makes this device an excellent choice for high quality, low voltage or
battery operated audio systems.
The device is stable for capacitive loads up to 500 pF.
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Doc ID 5560 Rev 4
TS921
Absolute maximum ratings
2
Table 2.
Symbol
V
CC
V
id
V
i
T
stg
T
j
R
thja
Absolute maximum ratings
Key parameters and their absolute maximum ratings
Parameter
Supply voltage
(1)
Differential input voltage
(2)
Input voltage
Storage temperature
Maximum junction temperature
Thermal resistance junction-to-ambient
SO-8
TSSOP8
DIP8
SO-8
TSSOP8
DIP8
HBM
Human body model
(3)
ESD
Electrostatic discharge
MM
Machine model
(4)
CDM
Charged device model
Output short-circuit duration
Latch-up immunity
10 sec.,
standard package
Soldering temperature
10 sec.,
lead-free package
260
Condition
Value
14
±1
V
DD
- 0.3 to V
CC
+ 0.3
-65 to +150
150
125
120
85
40
37
41
1.5
100
1.5
See
(5)
200
250
mA
°C
Unit
V
V
V
°C
°C
°C/W
R
thjc
Thermal resistance junction-to-case
°C/W
kV
V
kV
1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If V
id
> ±1 V, the
maximum input current must not exceed ±1 mA. In this case (V
id
> ±1 V) an input serie resistor must be added to limit input
current.
3. Human body model, 100 pF discharged through a 1.5 kΩ resistor into pin of device.
4. Machine model ESD, a 200 pF cap is charged to the specified voltage, then discharged directly into the IC with no external
series resistor (internal resistor < 5
Ω),
into pin to pin of device.
5. There is no short-circuit protection inside the device: short-circuits from the output to V
CC
can cause excessive heating. The
maximum output current is approximately 80 mA, independent of the magnitude of V
CC
. Destructive dissipation can result
from simultaneous short-circuits on all amplifiers.
Table 3.
Symbol
V
CC
V
icm
T
oper
Operating conditions
Parameter
Supply voltage
Common mode input voltage range
Operating free air temperature range
Value
2.7 to 12
V
DD
- 0.2 to V
CC
+ 0.2
-40 to +125
Unit
V
V
°C
Doc ID 5560 Rev 4
3/16
Electrical characteristics
TS921
3
Table 4.
Symbol
V
io
ΔV
io
I
io
I
ib
V
OH
V
OL
A
vd
Electrical characteristics
Electrical characteristics for V
CC
= 3 V, V
DD
= 0 V, V
icm
= V
CC
/2, R
L
connected to
V
CC
/2, T
amb
= 25 °C (unless otherwise specified)
Parameter
Input offset voltage
at T
min.
≤
T
amb
≤
T
max
Input offset voltage drift
Input offset current
Input bias current
High level output voltage
Low level output voltage
Large signal voltage gain
V
out
= 1.5 V
V
out
= 1.5 V
R
L
= 600
Ω
R
L
= 32
Ω
R
L
= 600
Ω
R
L
= 32
Ω
V
out
= 2 V
pk-pk
R
L
= 600
Ω
R
L
= 32
Ω
R
L
= 600
Ω
No load, V
out
= V
CC
/2
60
V
CC
= 2.7 to 3.3 V
60
50
0.7
R
L
= 600
Ω,
C
L
=100 pF
R
L
= 600
Ω,
C
L
=100 pF
f = 1 kHz
V
out
= 2 V
pk-pk
, f = 1 kHz,
A
v
= 1, R
L
= 600
Ω
2.87
2.63
100
180
35
16
4
1
80
80
80
1.3
68
12
9
0.005
1.5
2
1
15
30
100
Conditions
Min.
Typ.
Max.
3
5
Unit
mV
μV/°C
nA
nA
V
mV
V/mV
MHz
mA
dB
dB
mA
V/μs
Degrees
dB
nV
-----------
-
Hz
GBP
I
CC
CMR
SVR
I
o
SR
Pm
GM
e
n
THD
Gain bandwidth product
Supply current
Common mode rejection ratio
Supply voltage rejection ratio
Output short-circuit current
Slew rate
Phase margin at unit gain
Gain margin
Equivalent input noise voltage
Total harmonic distortion
%
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Doc ID 5560 Rev 4
TS921
Table 5.
Symbol
V
io
ΔV
io
I
io
I
ib
V
OH
Electrical characteristics
Electrical characteristics for V
CC
= 5 V, V
DD
= 0 V, V
icm
= V
CC
/2, R
L
connected to V
CC
/2,
T
amb
= 25 °C (unless otherwise specified)
Parameter
Input offset voltage
at T
min.
≤
T
amb
≤
T
max
Input offset voltage drift
Input offset current
Input bias current
High level output voltage
R
L
= 600
Ω
R
L
= 32
Ω
Low level output voltage
R
L
= 600
Ω
R
L
= 32
Ω
V
out
= 2 V
pk-pk
R
L
= 600
Ω
R
L
= 32
Ω
R
L
= 600
Ω
No load, V
out
= V
CC
/2
60
V
CC
= 4.5 to 5.5 V
60
50
0.7
R
L
= 600
Ω,
C
L
=100 pF
R
L
= 600
Ω,
C
L
=100 pF
f = 1 kHz
V
out
= 2 V
pk-pk
, f = 1 kHz,
A
v
= 1, R
L
= 600
Ω
V
out
= 1.5 V
V
out
= 1.5 V
4.85
4.4
120
300
2
1
15
30
100
Conditions
Min.
Typ.
Max.
3
5
Unit
mV
μV/°C
nA
nA
V
V
OL
A
vd
mV
Large signal voltage gain
35
16
4
1
80
80
80
1.3
68
12
9
0.005
1.5
V/mV
MHz
mA
dB
dB
mA
V/μs
Degrees
dB
nV
-----------
-
Hz
GBP
I
CC
CMR
SVR
I
o
SR
Pm
GM
e
n
THD
Gain bandwidth product
Supply current
Common mode rejection ratio
Supply voltage rejection ratio
Output short-circuit current
Slew rate
Phase margin at unit gain
Gain margin
Equivalent input noise voltage
Total harmonic distortion
%
Doc ID 5560 Rev 4
5/16
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