BL
Galaxy Electrical
NPN Silicon Planar Medium Power Transistor
FEATURES
Low equivalent on-resistance,R
CE(sat)
:
250mΩ at 1A.
Complementary To FMMT549.
Production specification
FMMT449
Pb
Lead-free
APPLICATIONS
NPN silicon planar medium power transistor.
ORDERING INFORMATION
Type No.
FMMT449
Marking
449
SOT-23
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
B
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Collector Current -Continuous
Base Current
Power Dissipation
Junction and Storage Temperature
Value
50
30
5
2
1
200
500
-55~150
Units
V
V
V
A
A
mA
mW
℃
P
tot
T
j
，
T
stg
Document number: BL/SSSTC051
Rev.A
www.galaxycn.com
1
BL
Galaxy Electrical
NPN Silicon Planar Medium Power Transistor
Production specification
FMMT449
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=1mA,I
E
=0
I
C
=10mA,I
B
=0
B
MIN
50
30
5
TYP
MAX
UNIT
V
V
V
I
E
=-100μA,I
C
=0
V
CB
=40V,I
E
=0
V
CB
=40V,I
E
=0T
amb
=100℃
V
EB
=4V,I
C
=0
V
CE
=2V,I
C
=50mA
V
CE
=2V,I
C
=500mA
0.1
10
0.1
70
100
80
40
0.5
1.0
1.25
1.0
150
300
μA
μA
DC current gain
h
FE
V
CE
=2V,I
C
=1A
V
CE
=2V,I
C
=2A
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Transition frequency
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
I
C
=1A, I
B
= 100mA
I
C
=2A, I
B
= 200mA
B
B
V
V
V
MHz
I
C
=1A, I
B
= 100mA
B
I
C
=1A,V
CE
=2V
V
CE
=10V, I
C
= 50mA
f=100MHz
V
CB
=10V,f=1MHz
Output capacitance
15
pF
Document number: BL/SSSTC051
Rev.A
www.galaxycn.com
2
BL
Galaxy Electrical
NPN Silicon Planar Medium Power Transistor
Production specification
FMMT449
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC051
Rev.A
www.galaxycn.com
3
BL
Galaxy Electrical
NPN Silicon Planar Medium Power Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
E
Production specification
FMMT449
SOT-23
SOT-23
Dim
A
B
C
D
Min
2.85
1.25
0.37
0.35
1.85
0.02
2.35
Max
2.95
1.35
0.43
0.48
1.95
0.1
2.45
K
B
1.0Typical
D
G
J
E
G
H
H
C
J
K
0.1Typical
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
Device
FMMT449
INFORMATION
Package
SOT-23
Shipping
3000/Tape&Reel
Document number: BL/SSSTC051
Rev.A
www.galaxycn.com
4
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