IXKF 40N60SCD1
CoolMOS Power MOSFET
with Series Schottky Diode and
Ultra Fast Antiparallel Diode
in High Voltage ISOPLUS i4-PAC
TM
I
D25
V
DSS
R
DSon
t
rr
=
=
=
=
38 A
600 V
60 mΩ
Ω
70 ns
Preliminary data
E 72873
Features
MOSFET T
Symbol
V
DSS
V
GS
I
D25
I
D90
Symbol
T
C
= 25°C
T
C
= 90°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
±20
38
25
V
V
A
A
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
60
2.1
0.5
70 mΩ
3.9
V
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 3 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= ±20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
0.3 mA
mA
100 nA
• fast CoolMOS power MOSFET- 3
rd
generation
- High blocking voltage
- Low on resistance
- Low thermal resistance due to reduced
chip thickness
• Series Schottky diode prevents current
flow through MOSFET’s body diode
- very low forward voltage
- fast switching
• Ultra fast HiPerFRED
TM
anti parallel diode
- low operating forward voltage
- fast and soft reverse recovery - low switching
losses
• ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- low coupling capacity between pins and
heatsink
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E 72873
Applications
Converters with
• circuit operation leading to current flow
through switches in reverse direction - e. g.
- phaseleg with inductive load
- resonant circuits
• high switching frequency
Examples
• switched mode power supplies (SMPS)
• uninterruptable power supplies (UPS)
• DC-DC converters
• welding converters
• converters for inductive heating
• drive converters
250
25
120
20
30
110
10
0.9
nC
nC
nC
ns
ns
ns
ns
0.45 K/W
K/W
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 50 A; R
G
= 1.8
Ω
with heat transfer paste
CoolMOS is a trademark of
IXYS reserves the right to change limits, test conditions and dimensions.
Infineon Technologies AG.
© 2003 IXYS All rights reserved
1-2
335
IXKF 40N60SCD1
Series Schottky Diode D
S
Symbol
I
F25
I
F90
Conditions
T
C
= 25°C
T
C
= 90°C
Maximum Ratings
60
40
A
A
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
0.9
0.7
2.9
V
V
V
F
R
thJC
R
thJH
I
F
= 20 A; T
VJ
= 25°C
T
VJ
= 125°C
with heat transfer paste
2 K/W
K/W
Anti Parallel Diode D
F
Symbol
I
F25
I
F90
Conditions
T
C
= 25°C
T
C
= 90°C
Maximum Ratings
32
16
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.1
1.4
15
70
2.6
2.5
V
V
A
ns
1.3 K/W
K/W
V
F
I
RM
t
rr
R
thJC
R
thJH
I
F
= 20 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heat transfer paste
Component
Symbol
V
ISOL
T
VJ
T
stg
F
C
mounting force with clip
Conditions
I
ISOL
≤
1 mA; 50/60 Hz
Maximum Ratings
2500
-40...+150
-40...+125
20 ... 120
V~
°C
°C
N
Symbol
C
p
d
S
, d
A
d
S
, d
A
Weight
Conditions
coupling capacity between shorted pins
and mounting tab in the case
D pin - S pin
pin - backside metal
Characteristic Values
min.
typ. max.
40
7
5.5
9
pF
mm
mm
g
335
© 2003 IXYS All rights reserved
2-2
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