SOT23 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS —
BFS17L - E1L
BFS17H - E1H
BFS17L
BFS17H
C
E
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
25
15
2.5
50
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
BFS17L
BFS17H
SYMBOL
I
CBO
MIN.
TYP.
MAX.
10
10
UNIT
nA
µ
A
CONDITIONS.
V
CB
=10V, I
E
=0
V
CB
=10V, I
E
=0,
T
amb
= 100°C
h
FE
25
70
20
100
200
125
1.0
1.3
GHz
GHz
pF
1.5
2.0
4.5
-45
pF
pF
dB
dB
I
C
=2.0mA, V
CE
=1.0V
I
C
=2.0mA, V
CE
=1.0V
I
C
=25mA, V
CE
=1.0V
I
C
=2.0mA, V
CE
=5.0V
f=500MHz
I
C
=25mA, V
CE
=5.0V
f=500MHz
I
C
=2.0mA, V
CE
=5V, f=1MHz
V
CB
=10V, f=1MHz
V
EB
=0.5V, f=1MHz
I
C
=2.0mA, V
CE
=5.0V
R
S
=50
Ω
, f=500MHz
I
C
=10mA, V
CE
=6.0V
R
L
=37.5
Ω
,T
amb
=25°C
V
o
=100mV at f
p
=183MHz
V
o
=100mV at f
q
=200MHz
measured at f
(2q-p)
=217MHz
Transition
Frequency
f
T
Feedback Capacitance
Output Capacitance
Input Capacitance
Noise Figure
Intermodulation
Distortion
-C
re
C
obo
C
ibo
N
d
im
0.85
Spice parameter data is available upon request for this device
TBA
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