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GBU10G

产品描述10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小106KB,共2页
制造商BILIN
官网地址http://www.galaxycn.com/
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GBU10G概述

10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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BL
FEATURES
GALAXY ELECTRICAL
GBU10A - - - GBU10M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 10.0 A
SILICON BRIDGE RECT IFIERS
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
Glass passivated chip junctions
GBU
.933(23.7)
.894(22.7)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.5)
45
.310(7.9)
.290(7.4)
0
.140(3.56)
.130(3.30)
+
+
.075(1.9)R.TYP.
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
_
.080(2.03)
.060(1.52)
~
~
+
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU
10A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100
output current
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at
10
A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(note 2)
(note 1)
Operating junction temperature range
Storage temperature range
GBU
10B
100
70
100
GBU
10D
200
140
200
GBU
10G
400
280
400
10
GBU
10J
600
420
600
GBU
10K
800
560
800
GBU
10M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
50
35
50
I
F SM
200
A
V
F
I
R
C
J
R
θJA
R
θJC
T
J
T
STG
211
1.1
5.0
500
94
21
2.2
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
pF
/W
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg
N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate.
2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
www.galaxycn.com
Document Number 0287028
BL
GALAXY ELECTRICAL
1.

GBU10G相似产品对比

GBU10G GBU10A GBU10B GBU10D GBU10M GBU10K GBU10J
描述 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

 
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