20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX:
(973) 376-8960
Features
FAST SWITCHING
LOW CAPACITANCE
HIGH CURRENT CAPABILITY
Description/Applications
The 5082-1000 series of diodes feature planar silicon
epitaxial construction to provide high conductance, low
capacitance, and nanosecond turn-on and turn-off.
Process control of the diode manufacturing enables
specification of effective minority carrier lifetime. Turn-on
time and voltage overshoot are minimized in these diodes
of low conductivity modulation.
These diodes are ideally suited for applications such as
core drivers, pulse generators, input gates or wherever
high conductance without loss of speed is required.
HIGH
CONDUCTANCE
DIODES
5082-1001 (IN 4456)
5082-1002
5082-1003
5082-1004
50821006
25.4(1.001
t
2.72 (0.107)
ZlSfiSSig)
WIN.
"pn
CATHODE
Maximum Ratings at T
CASE
=25°C
WIV — Working Inverse Voltage
1006
1001/1002
1003/1004
IF (Surge) — Forward Current Surge,
1.0 Second Duration
IF (Surge) — Forward Current Surge,
1.0 Microsecond Duration
PDISS — Power Dissipation'
1
!
TA — Operating Temperature Range
40 Volts
30 Volts
20 Volts
0.75 Amp
7.50 Amp
500 mW
-65°C to +175°C
25.4 (1.00)
MIN.
TSTG — Storage Temperature Range -65° C to +200° C
Operation of these devices within the above
temperature ratings will assure a device Mean
Time Between Failure (MTBF) of approximately
1 x 10^ hours.
^
0.56(0022}
OUTLINE 11
WMENSIONS IN MILLIMETERS AND (INCHES)
Electrical Specifications at T
A
=25°c
Part
Number
5082-
1001
(1N4456)
1002
1003
1004
1006
Test
Conditions
Minimum
Breakdown
Voltage
VBB (V)
35
35
25
25
50
Minimum
Forward
Current
If(mA)
180
300
100
200
150
Vp*t0V
Minimum
Forward
Current
l
F
{mA)
500
800
300
600
500
Maximum
Reverse
Leakage.
Currant
In (nA)
200
200
200
200
200
13)
Maximum
Reverie
Leakage
Current
InCuA)
200
200
200
200
200
150° C'
31
(Maximum
Total
Capacitance
Co (PF)
1.5
3.0
2,0
4,0
1.1
Maximum
Reverse
Recovery
Time
Maximum
Turn-On
Time
trr(ns)
1.5
2.0
1.5
2.0
1.5
ton (ns)
2.5
2.5
2.0
2.0
—
lfi=10^A
Vp=1.4V
I2J
12}
V
R
=OV,
f=1.Q MHz
(Figure 9)
( Figure 10 1
NOTES: 1. Mounted on a printed circuit board in still air.
2. Measured at a repetition rate not to exceed the power
dissipation.
3. Vn=35V for 1006; V
R
=30V for 1001, 1002; V
R
=20V for
1003, 1004.
4. Inductance measured at the edge of the glass package seal is
typically 4.0 nH for all devices.
5. Rectification Efficiency is typically 65% for all devices
f l i *^«I
1800
1000
,
.81
0
.2
.4
.6
.8
1.0
1,2
1.4
0
.2
.4
.8
.8
1.0
1.2
1.4
FORWARD VOLTAGE
IV)
FORWARD VOLTAGE (VI
Figure 1. Typical Forward Conduction Characteristics,
5082-1001, 1003, and 1006.
Figure 2. Typical Forward Conduction Characteristics,
5082-1002 and 1004.
JUU
10,000
V
iv
1.0
.1
\
1
1.0
1.5
2.0
At
0.5
2.5
K
3.0
3.6
4.0
0
25
50
78
100
125
150
176
TEMPERATURE COEFFICIENT (rnWC)
AMBIENT TEMPERATURE (°C)
Figure 3. Typical Forward Current Temperature
Coefficient.
Figure 4. Typical Reverse Current at Specified VR vs.
Increasing Temperature.
1000
HATEOWJWER DISSIPATION (WATTS)
p p p
o
f
_o —
to
£> *. 01
a
\
\\|
t
5.0
10
15
20
2S
30
35
\E SO 7
T
A
- AMBIENT TEMPERATURE f C)
REVERSE VOLTAGE (V)
stm32/stm8
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