PD - 94804B
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
l
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
IRL1404Z
IRL1404ZS
IRL1404ZL
HEXFET
®
Power MOSFET
D
V
DSS
= 40V
R
DS(on)
= 3.1mΩ
I
D
= 75A
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
TO-220AB
IRL1404Z
D
2
Pak
IRL1404ZS
TO-262
IRL1404ZL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
Max.
200
140
75
790
230
1.5
± 16
Units
A
W
W/°C
V
mJ
A
mJ
Linear Derating Factor
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
T
J
T
STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
Ã
h
220
490
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
y
y
Typ.
Max.
0.65
–––
62
40
Units
°C/W
i
i
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
jÃ
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1
6/1/04
IRL1404Z/S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
40
–––
–––
–––
–––
1.4
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.034
2.5
–––
–––
–––
–––
–––
–––
–––
–––
75
28
40
19
180
30
49
4.5
7.5
5080
970
570
3310
870
1280
–––
–––
3.1
4.7
5.9
2.7
–––
20
250
200
-200
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
mΩ V
GS
= 5.0V, I
D
= 40A
V
GS
= 4.5V, I
D
= 40A
V V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 10V, I
D
= 75A
µA V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 16V
V
GS
= -16V
I
D
= 75A
nC V
DS
= 32V
V
GS
= 5.0V
V
DD
= 20V
I
D
= 75A
ns R
G
= 4.0Ω
V
GS
= 5.0V
D
Between lead,
e
e
e
e
e
nH
6mm (0.25in.)
from package
G
pF
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
f
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
26
18
180
A
720
1.3
39
27
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 20V
di/dt = 100A/µs
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L = 0.079mH, R
G
= 25Ω, I
AS
= 75A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
2
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IRL1404Z/S/L
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
3.0V
10
10
3.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
1
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
T J = 175°C
100
200
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
TJ = 25°C
150
100
T J = 175°C
10
T J = 25°C
VDS = 10V
60µs PULSE WIDTH
2
3
4
5
6
7
8
9
10
50
V DS = 10V
0
0
50
100
150
200
ID,Drain-to-Source Current (A)
1.0
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRL1404Z/S/L
100000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
6.0
ID= 75A
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 32V
VDS= 20V
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10.00
T J = 25°C
VGS = 0V
0.0
0.5
1.0
1.5
2.0
2.5
1msec
1.00
10msec
100
1000
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRL1404Z/S/L
200
Limited By Package
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 75A
VGS = 10V
150
1.5
100
1.0
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
τ
1
τ
2
0.001
Ci=
τi/Ri
Ci i/Ri
Ri (°C/W)
τi
(sec)
0.000213
0.185
0.241
0.001234
0.227
0.021750
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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