Schottky Barrier Diodes
NEW PRODUCT GUIDE
The U3FWK42 is a commercial Schottky barrier diode
(SBD) based on sub-micron trench technology. The
U3FWK42 seeks to improve on the existing trade-off
between forward voltage (V
F
) and instantaneous reverse
current (I
R
) in Schottky barrier diodes.
The U3FWK42's forward voltage is about 30% lower
compared to other Toshiba diodes with the same
instantaneous reverse current, an industry first for a
commercial SBD.
Designed for miniaturized, high component density mobile
equipment, the U3FWK42 is packaged as a surface-
mount device (SMD).
A product line with a variety of different current ratings is
planned for the future.
U3FWK42
Applications
Prevention of reverse current in applications such as mobile equipment
Power supply peripheral equipment such as batteries
PC peripheral equipment, office equipment power supplies, DC-DC converters in mobile equipment
Features
Sub-micron trench technology used
Forward voltage (V
F
) 30% lower than that of conventional SBDs(conventional SBD V
F
=0.55V)
Reduced power dissipation and improved system efficiency due to lower V
F
Breakdown voltage(V
R
) :30V
New miniature SMD-type DP package with good heat sink characteristics for 3-A products.
Characteristic Diagrams
C42
I
F
-V
F
Forward current I
F
(A)
5
Ta=25°C
4
U3FWK42
Trench type SBD
3
Reduced V
F
P
W
loss-I
P
Conventional products
1.8
1.6
1.4
Conditions
V
R
=30V
Tj =100°C
Duty ratio 50%
Square waveform
U3GW
J2
P
W
loss (W)
1.2
1.0
0.8
0.6
0.4
0.2
2
U3GWJ2C42
Conventional product
with ordinary SBD
Reduced by 30%
1
U3FWK42
Trench-type SBD
0
0
200
400
600
800
1000
0
0
1
2
3
4
5
6
Forward voltage V
F
(mV)
I
P
(A)
Principal Ratings and Characteristics (Ta=25°C)
Package Dimensions
Maximum Rating
Product
Number
Electrical Characteristics
Package
0.6
±
0.15
0.95 max
0.6
±
0.15
(Unit: mm)
DP
6.8 max
5.2
±
0.2
2.0 max
2.5 5.5±0.2
Peak repetitive
Average
Peak forward Peak repetitive
reverse voltage rectified current
voltage
reverse current
V
RRM
(V)
I
F
(avg.) (A)
V
FM
(V)
I
RRM
(mA)
30
3
0.4 (I
F
=3A) 0.5 (V
RRM
=30V)
0.6 max
0.9
1.5
±
0.2
U3FWK42
DP
0.6 max
1.6
±
0.2
2.3
1 2 3
2.3
1.1
±
0.2
1
3
2
1. Anode
2. Cathode
3. Anode
U1FWJ44P
In addition to the U3FWK42, the 1-A U1FWJ44P Schottky barrier diode is also available. In the U1FWJ44P trench
technology is used to achieve a low forward voltage, V
F
(V
FM
=0.3 V)
Package Dimensions
Maximum Rating
Product
Number
Electrical Characteristics
Package
(Unit: mm)
I-FLAT
2
2.5 max
4.3
±
0.2
4.7
±
0.3
U1FWJ44P
30
1
Note
Since Schottky barrier diodes (SBDs) have a large instantaneous reverse current (I
R
), under stringent
usage conditions(e.g. in high-temperature, high-voltage applications) the increase in reverse power dissipation
can cause overheating runaway and damage the SBD. The design of the heat sink and safety features
must take into account both forward and reverse power dissipation.
0 to 0.1
1. Anode
2. Cathode
1.9
±
0.3
0.3 (I
F
=1A) 1.0 (V
RRM
=30V)
I-FLAT
1.5
±
0.2
2.4
±
0.2
1
0.9
1.2
±
0.2
0.2
Peak repetitive
Average
Peak forward Peak repetitive
reverse voltage rectified current
voltage
reverse current
V
RRM
(V)
I
F
(avg.) (A)
V
FM
(V)
I
RRM
(mA)
1.2
±
0.2
Toshiba has developed a new Schottky barrier diode series with
maximum forward voltages (V
F
(max)) of either 0.40 V or 0.45 V.
We sincerely hope that you will use the new series as well as
our current products, which have a V
F
(max) of either 0.37 V or
0.55 V.
Recently, greater miniaturization and a sharp increase in
component mounting densities have meant that components
are now being used at higher ambient temperatures than before.
Since Schottky barrier diodes feature low forward voltage in
combination with large instantaneous reverse current (I
R
),
designers must take reverse power dissipation into account
when designing application environments.
Ensure that the SBD you select is suitable for the application
environment in which it will be used.
I-FLAT
DO-41SS
DO-15L
Features
Diversification of the SBD product line has expanded the range of applications and increased efficiency.
Product Line
Product Number
1FWJ43L
U1FWJ44L
1FWJ43M
U1FWJ44M
2FWJ42M
U2FWJ44M
Item
I
F(AV)
(A)
V
RRM
(V)
V
FM
(V)
0.4
I
RRM
(mA)
0.8
0.5
Package
DO-41SS
I-FLAT
DO-41SS
I-FLAT
DO-15L
I-FLAT
Comment
1
30
0.45
2
1.0
On sale
Under
development
Characteristic Diagrams
I
F
- V
F
(typ.)
1.6
2.0
I
R
- V
R
(typ.)
1.8
1.6
P
W
loss - T
L
0.7
0.6
0.5
Ta=25°C
1.4
1.2
Ta=25°C
1.4
Power loss-T
L
Conditions
Duty ratio=50%
Square waveform
U1FWJ44N
1.0
I
R
(mA)
1.2
1.0
0.8
0.6
U1FWJ44N
U1FWJ44L
U1FWJ44M
U1GWJ44
Pw l
oss
(W)
I
F
(A)
0.4
0.3
U1GWJ44
0.2
U1FWJ44M
0.1
0
0.8
0.6
0.4
U1FWJ44N
U1FWJ44L
U1FWJ44M
U1GWJ44
U1FWJ44L
0.4
0.2
0
0
100
200
300
400
500
600
700
800
0.2
0
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
V
F
(mV)
V
R
(V)
T
L
(°C)
List of Characteristics
Product Number
U1FWJ44L
U1FWJ44M U2FWJ44M
1.2
±
0.2
1FWJ43L
1FWJ43M
2FWJ42M
1
4.3
±
0.2
4.7
±
0.3
1.2
±
0.2
1.9
±
0.3
External
Appearance
2.4
±
0.2
1
0.9
26 min
φ
0.6
2
0 to 0.1
2
1. Anode
2. Cathode
1. Anode
2. Cathode
1. Anode
2. Cathode
I-FLAT
DO-41SS
DO-15L
Maximum Ratings
I
F(AV)
(A)
V
RRM
(V)
I
FSM
(A)
T
j
(˚C)
T
stg
(˚C)
I
RRM
(mA)
V
FM
(V)
0.8
0.4
1.0
2.0
30
1.0
2.0
20
40
- 40 to 125
- 40 to 125
0.5
0.45
1.0
0.8
0.4
20
40
Electrical
Characteristics
(Ta = 25°C)
0.5
0.45
1.0
Note
Since Schottky barrier diodes (SBDs) have a large instantaneous reverse current (I
R
), under stringent
usage conditions(e.g. in high-temperature, high-voltage applications) the increase in reverse power dissipation
can cause overheating runaway and damage the SBD. The design of the heat sink and safety features
must take into account both forward and reverse power dissipation.
26 min
φ
3.9
7.2
1.5
±
0.2
0.2
3.0
±
0.2
Cathode
Mark
26 min
Cathode
Mark
26 min
1
φ
3.9
2
φ
2.5
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