Datasheet> 器件分类 > 分立半导体> 二极管> UM9552S

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UM9552S: 产品描述Pin Diode, Silicon,; 产品类别分立半导体二极管; 文件大小105KB，共4页; 制造商Microsemi; 官网地址https://www.microsemi.com

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UM9552S概述

Pin Diode, Silicon,

UM9552S规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
包装说明	S-XUPM-G1
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW DISTORTION
应用	ATTENUATOR
外壳连接	ANODE
配置	SINGLE
最大二极管电容	20 pF
标称二极管电容	15 pF
二极管元件材料	SILICON
最大二极管正向电阻	0.4 Ω
二极管类型	PIN DIODE
JESD-30 代码	S-XUPM-G1
JESD-609代码	e0
少数载流子标称寿命	70 µs
元件数量	1
端子数量	1
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	POST/STUD MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
反向测试电压	100 V
表面贴装	YES
技术	POSITIVE-INTRINSIC-NEGATIVE
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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580 Pleasant St.

Watertown, MA 02472

PH: (617) 926-0404

FAX: (617) 924-1235

UM9552

Features

•

Low Frequency Attenuator

HF/LF Band Operation

Long Lifetime (70

s typ.)

Very Low Distortion (IP3 @ 455 KHz = < 60 dBm)

PIN DIODE

ATTENUATOR

Description

The UM9552 is a very long minority carrier

lifetime (70

s typical) PIN DIODE that has been

developed for low HF or LF Band Attenuator

Applications. They have been evaluated for attenuator

linearity and distortion characteristics in a Bridge Tee

Attenuator Circuit at 455 KHz (the common intermediate

frequency for AM transmitters and receivers). When the

UM9552’s are used as the two variable resistors in the

Bridged Tee Circuit, the Third Order Intermodulation

Products are below -60 dBc with 0 dBm input power

over an attenuation range of 4 dB to 30 dB.

These thicker, longer lifetime PIN diodes exhibit

a more linear forward biased resistance (R

) vs forward

bias current (If) relationship, which greatly simplifies the

design of the driver circuits that supply the bias

currents over the specified attenuation range. This task

is simplified if the low attenuation range is truncated

and the few dB are compensated by commercially

available, inexpensive 4 to 6 dB gain blocks.

TYPICAL POWER LEVEL vs FORWARD BIAS CURRENT

f1 = F +/- 1 KHz

f2 = F +/- 1 KHz

POWER LEVEL/TONE (dBm)

500KHz

250KHz

150KHz

TAU = 0.1 ms

If NEEDED TO OBTAIN AN IM3 OF - 60 dBc (mA)

Electrical Specifications (25°C)

Test

Diode Resistance R

Min.

Typ.

18.0

2.0

.25

Max.

Units

Ω

dBm

Conditions

F = 455 KHz, I

= 1 mA

F = 455 KHz, I

=10 mA

F = 455 KHz, I

= 100 mA

F = 1 MHz, 100 V

= 50 V

=10 mA / 100 V

Power in = 0 dBm / Tone

F1 = 454 KHz F2 = 456 KHz

Circuit Drawing #B14433

25°C Stud Temperature

Capacitance C

Reverse Current I

Carrier Lifetime

IP3

0.4

Thermal Resistance

1.0

C / W

MSCO867B 11-30-98

DSW UM9552 <B>(34943)

IP3 (dBm)

UM9552S相似产品对比

	UM9552S	UM9552R	UM9552SR
描述	Pin Diode, Silicon,	Pin Diode, Silicon,	Pin Diode, Silicon,
是否无铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
其他特性	LOW DISTORTION	LOW DISTORTION	LOW DISTORTION
应用	ATTENUATOR	ATTENUATOR	ATTENUATOR
外壳连接	ANODE	CATHODE	CATHODE
配置	SINGLE	SINGLE	SINGLE
最大二极管电容	20 pF	20 pF	20 pF
标称二极管电容	15 pF	15 pF	15 pF
二极管元件材料	SILICON	SILICON	SILICON
最大二极管正向电阻	0.4 Ω	0.4 Ω	0.4 Ω
二极管类型	PIN DIODE	PIN DIODE	PIN DIODE
JESD-30 代码	S-XUPM-G1	S-XSSO-G1	S-XUPM-G1
JESD-609代码	e0	e0	e0
少数载流子标称寿命	70 µs	70 µs	70 µs
元件数量	1	1	1
端子数量	1	1	1
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE	SQUARE
封装形式	POST/STUD MOUNT	SMALL OUTLINE	POST/STUD MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified
反向测试电压	100 V	100 V	100 V
表面贴装	YES	YES	YES
技术	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE
端子面层	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING
端子位置	UPPER	SINGLE	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	-	1

UM9552S

UM9552S概述

UM9552S规格参数

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