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JANTXV1N3157

产品描述Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN
产品类别分立半导体    二极管   
文件大小131KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
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JANTXV1N3157概述

Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN

JANTXV1N3157规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码DO-7
包装说明O-LALF-W2
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性METALLURGICAL BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗15 Ω
JEDEC-95代码DO-204AA
JESD-30 代码O-LALF-W2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.5 W
认证状态Not Qualified
参考标准MIL-19500/158
标称参考电压8.4 V
表面贴装NO
技术ZENER
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
电压温度Coeff-Max0.084 mV/°C
最大电压容差4.76%
工作测试电流10 mA
Base Number Matches1

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1N3154 thru 1N3157, A, -1, e3
8.4 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes
provides a selection of 8.4 V nominal voltages and temperature coefficients to
as low as 0.001 %/
o
C for minimal voltage change with temperature when
operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are
also available in JAN, JANTX, and JANTXV military qualifications. As a further
option for commercial product, they are available as RoHS Compliant with an
e3 suffix added to the part number. Microsemi also offers numerous other
Zener Reference Diode products for a variety of other voltages from 6.2 V to
200 V.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-7
(DO-204AA)
FEATURES
JEDEC registered 1N3154 thru 1N3157A series
Standard reference voltage of 8.4V +/- 5% with tighter
tolerances available
1N3154, 3155, 3156, and 3157 also have military
qualification to MIL-PRF-19500/158 up to the
JANTXV level by adding JAN, JANTX, or JANTXV
prefixes to part numbers as well as “-1” suffix, e.g.
JANTX1N3157-1, etc.
Internal metallurgical bonds
JANS Equivalent available via SCD
Radiation Hardened devices available by changing
1N prefix to RH, e.g. RH3156, RH3157, RH3157A,
etc. Also consult factory for “RH” data sheet
brochure
RoHS Compliant devices available by adding an “e3”
suffix (not applicable to military)
APPLICATIONS / BENEFITS
Provides minimal voltage changes over a broad
temperature range
For instrumentation and other circuit designs
requiring a stable voltage reference
Maximum temperature coefficient selections
available from 0.01%/ºC to 0.001%/ºC
Tight reference voltage tolerances at the 8.4 V
nominal is available by adding tolerance 1%, 2%,
3%, etc. after the part number for identification e.g.
1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
MAXIMUM RATINGS
Operating & StorageTemperature: -65
o
C to +175
o
C
DC Power Dissipation: 500 mW @ T
L
= 25
o
C and
maximum current I
ZM
of 55 mA. NOTE: For optimum
voltage-temperature stability, I
Z
= 10.0 mA (less than
90 mW in dissipated power)
Solder temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
TERMINALS: Tin-Lead (military) or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with the
banded end positive with respect to the opposite end
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
1N3154 - 1N3157A, e3
Copyright
©
2005
7-18-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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