FMS2024
DC–20 GH
Z
MMIC SPDT R
EFLECTIVE
S
WITCH
F
EATURES
•
•
•
•
•
Low insertion loss: 1.4 dB at 20 GHz
High isolation: 37 dB at 20 GHz
All reflective design
Excellent low control voltage performance
Available in die form
RFIN
Production Datasheet v3.0
F
UNCTIONAL
S
CHEMATIC
V2
V1
RFO1
V11
V22
G
ENERAL
D
ESCRIPTION
The FMS2024 is a low loss high isolation
broadband single-pole-double-throw Gallium
Arsenide switch, designed on the FL05 0.5µm
switch process from Filtronic.
This process technology offers leading-edge
performance optimised for switch applications.
The FMS2024 is developed for the broadband
communications,
instrumentation
and
electronic warfare markets.
V33
V44
V3
V4
RFO2
T
YPICAL
A
PPLICATIONS
•
•
•
•
Broadband communications
Test Instrumentation
Fiber Optics
Electronic warfare (ECM, ESM)
E
LECTRICAL
S
PECIFICATIONS
(small-signal unless otherwise stated)
P
ARAMETER
C
ONDITIONS
DC
5 GHz
10 GHz
15 GHz
20 GHz
DC – 20 GHz
DC – 20 GHz
DC – 20 GHz
2 GHz
10 GHz
20 GHz
20% to 80% RF
80% to 20% RF
50% DC to 80% RF
50% DC to 20% RF
M
IN
-1
-1.25
-1.6
-1.6
-1.8
–
–
–
23
22
22
–
–
–
–
T
YP
-0.7
-0.85
-1.1
-1.2
-1.35
-37
-14
-15
26
24
24
20
40
30
50
M
AX
–
–
–
–
–
-34
-11
-11
–
–
–
–
–
–
–
U
NITS
dB
dB
dB
dB
dB
dB
dB
dB
dBm
Insertion Loss
Isolation
Input Return Loss
Output Return Loss
P1dB
Switching speed
ns
Note 1: T
AMBIENT
= 25°C, Vctrl = 0V/-5V, Z
IN
= Z
OUT
= 50Ω.
Note 2: Sub-10ns 10% to 90% and 90% to 10% switching speeds can be achieved by changing the operating
voltage Vctrl from 0V / -5V to +1V / -5V.
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMS2024
Production Datasheet v3.0
A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Max Input Power
Control Voltage
Operating Temp
Storage Temp
S
YMBOL
Pin
Vctrl
Toper
Tstor
A
BSOLUTE
M
AXIMUM
+38dBm
+1/-10V
-40°C to +100°C
-55°C to +150°C
P
AD
N
AME
RFIN
RFO1
RFO2
D
ESCRIPTION
P
IN
C
OORDINATES
(µm)
RFIN
RFOUT1
RFOUT2
V1
V2
V3
V4
V11
V22
V33
V44
116,1055
1408,1929
1408,181
645, 1929
395, 1929
395, 181
645, 181
1753,1608
1753,1408
1753,702
1753,502
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
V1
V2
V3
P
AD
L
AYOUT
V4
V11
V22
V33
V44
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
D
IE
S
IZE
(µm)
1910 x 2110
D
IE
T
HICKNESS
(µm)
100
M
IN
. B
OND
P
AD
P
ITCH
(µm)
150
M
IN
. B
OND PAD
O
PENING
(µm x
µm
)
116 x 116
T
RUTH
T
ABLE
C
ONTROL LINES
V1
OR
V11
-5V
0V
0V
RF
PATH
V4
OR
V44
0V
-5V
0V
V2
OR
V22
0V
-5V
-5V
V3
OR
V33
-5V
0V
-5V
RFIN-RFO1
On
Off
Off
RFIN-RFO2
Off
On
Off
Note 1: -5V
±
0.2V; 0V
±
0.2V
Note 2: V11, V22, V33 and V44 are alternative control lines to V1, V2, V3 and V4 respectively
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMS2024
Production Datasheet v3.0
P
REFERRED
A
SSEMBLY
I
NSTRUCTIONS
:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
The back of the die is metallised and the
recommended mounting method is by the use
of solder or conductive epoxy. If epoxy is
selected then it should be applied to the
attachment surface uniformly and sparingly to
avoid encroachment of epoxy on to the top
face of the die and ideally should not exceed
half the chip height. For automated dispense
Ablestick LMISR4 is recommended and for
manual dispense Ablestick 84-1 LMI or 84-1
LMIT are recommended. These should be
cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing
only. If possible the curing oven should be
flushed with dry nitrogen.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
be used. Thermosonic ball bonding is
preferred. A nominal stage temperature of
150°C and a bonding force of 40g has been
shown to give effective results for 25µm wire.
Ultrasonic energy shall be kept to a minimum.
For this bonding technique, stage temperature
should not be raised above 200°C and bond
force should not be raised above 60g.
Thermosonic
wedge
bonding
and
thermocompression wedge bonding can also
be used to achieve good wire bonds.
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
H
ANDLING
P
RECAUTIONS
:
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 1A (250-
500 V) as defined in JEDEC Standard No. 22-
A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
A
PPLICATION
N
OTES
& D
ESIGN
D
ATA
:
Application Notes and design data including S-
parameters are available on request.
D
ISCLAIMERS
:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
O
RDERING
I
NFORMATION
:
P
ART
N
UMBER
FMS2024-000
D
ESCRIPTION
Die in Waffle-pack
(Gel-pak available on request)
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
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