FMA219
X-B
AND
LNA MMIC
F
EATURES
:
•
•
•
•
•
•
7.0 – 11.0 GHz Operating Bandwidth
1.1 dB Noise Figure
21 dB Small-Signal Gain
12 dBm Output Power
+3V Single Bias Supply
DC De-coupled Input and Output Ports
Datasheet v3.0
L
AYOUT
:
G
ENERAL
D
ESCRIPTION
:
The FMA219 is a 2-stage, reactively matched
pHEMT low-noise MMIC amplifier designed for
use over 7.0 to 11.0 GHz. The amplifier
requires a single +3V supply and one off-chip
component for supply de-coupling. Both the
input and output ports are DC de-coupled.
Grounding of the amplifier is provided by
plated thru-vias to the bottom of the die, no
additional ground is required. The amplifier is
unconditionally stable over all load states (-45
to +85°C), and conditionally stable if the input
port is open-circuited.
T
YPICAL
A
PPLICATIONS
:
•
•
Low noise front end amp
lifiers
General X-Band gain block
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Operating Frequency Bandwidth
Small Signal Gain
Operating Current
Small Signal Gain Flatness
Noise Figure
S
YMBOL
BW
S21
IOP
∆S21
NF
C
ONDITIONS
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
No RF input
VDD = +3 V IDD = IOP
VDD = +3 V, IDD = IOP
VDD = +3 V, IDD = IOP
POUT = +1.5 dBm SCL
VDD = +3 V
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
M
IN
7
19
50
T
YP
M
AX
11
U
NITS
GHz
dB
mA
21
65
±0.5
1.1
23
80
±0.8
1.4
dB
3rd Order Intermodulation Distortion
Power at 1dB Compression
Input Return Loss
Input Return Loss @ 9.5GHz + 10GHz
Output Return Loss
Reverse Isolation
IMD
P1dB
S11
S11(9.5+10GHz)
S22
S12
-47
11.5
12.5
-7
-3
-4
-16
-40
-10
-30
dBc
dBm
dB
dB
dB
dB
Note: T
AMBIENT
= 22°C
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMA219
Datasheet v3.0
A
BSOLUTE
M
AXIMUM
R
ATING
1
:
P
ARAMETER
Supply Voltage
Supply Current
RF Input Power
Storage Temperature
Total Power Dissipation
Gain Compression
Thermal Resistance
4
2,3
S
YMBOL
VDD
IDD
PIN
TSTG
PTOT
Comp.
ΘJC
T
EST
C
ONDITIONS
For any operating current
For VDD < 5V
For standard bias conditions
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
750mW dissipation, heatsink temp 22°C
A
BSOLUTE
M
AXIMUM
6V
100mA
5dBm
-40°C to 150°C
750mW
5dB
175°C/W
Notes:
1. T
Ambient
= 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2. Total Power Dissipation is defined as: P
TOT
= P
DC
+ P
IN
– P
OUT
where P
DC
= DC Bias Power, P
IN
= RF Input Power, P
OUT
= RF Output Power
Total Power Dissipation shall be de-rated above 22°C as follows:
P
TOT
= (150 – T
CASE
) /
Θ
JC
W
where T
CASE
= Temperature of the on the underside of the package or substrate
3. The quoted Thermal Resistance value is a worst-case figure assuming Gold/Tin die attach onto a Copper
substrate. The use of epoxy die attach and substrate materials of lower thermal conductivity will increase the
Thermal Resistance. Further information and assistance is available on request.
4.
Θ
JC
increases linearly from 175°C/W at a T
CASE
of 22°C to 210°C/W at a T
CASE
of 145°C
P
AD
L
AYOUT
:
P
AD
N
AME
A
B
IN
D
ESCRIPTION
P
IN
C
OORDINATES
(µm)
RFIN
ROUT
102, 888
1527, 843
1177, 103
A
B
C
VD
Drain Voltage
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
C
D
IE
S
IZE
(µm)
1624 x 1624
D
IE
T
HICKNESS
(µm)
100
M
IN
. B
OND
P
AD
P
ITCH
(µm)
>150
M
IN
. B
OND PAD
O
PENING
(µm x
µm
)
92 x 92
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMA219
Datasheet v3.0
T
YPICAL
M
EASURED
P
ERFORMANCE
O
N
W
AFER
:
Note: Measurement Conditions T
AMBIENT
= 22°C unless otherwise stated
RF PERFORMANCE (V
DD
= +3V, I
DD
= I
OP
)
FMA219 FREQUENCY RESPONSE
1.4
NOISE FIGURE
FMA219BF NOISE FIGURE
24
SSG, Input / Output Return Loss (dB)
1.3
1.2
1.1
20
16
12
8
4
0
-4
-8
-12
-16
-20
5
6
7
8
9
10
11
12
13
14
15
Frequency [GHz]
S21
Noise Figure (dB)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
7
8
9
10
11
Frequency (GHz)
Note: Multiple traces show typical die variation
across a 150mm (6") wafer. Effect of typical
bond wire inductances (25µm dia. 1mm
length, 2 each on input and output ports) is
less than a 0.5dB decrease in S21 (@11GHz),
and no measurable effect on noise figure.
POWER TRANSFER CHARACTERISTIC
FMA219BF POWER TRANSFER CHARACTERISTIC
16.0
Pout@7GHz
Pout@9GHz
3
RD
-ORDER INTERMODULATION
IMP DU vs. IN T PO ERA 9.0GH
RO CTS
PU W T
z
-15.00
4.0
14.0
3.5
11.0
Pout
Im dB
3, c
-20.00
12.0
Output Power (dBm)
Pout@11GHz
Comp@7GHz
3.0
Compression Point, (dB)
10.0
Comp@9GHz
Comp@11GHz
2.5
8.0
2.0
6.0
1.5
O
9.0
u
tp
ut
Po
7.0
w
e
r
(d
B
5.0
m
)
3.0
IM
Pr
od
uc
-30.00
ts
(d
B
c
-35.00
)
-25.00
4.0
1.0
-40.00
2.0
0.5
0.0
-23.0
-21.0
-19.0
-17.0
-15.0
-13.0
Pin (dBm)
-11.0
-9.0
-7.0
-5.0
0.0
-3.0
1.0
-19.0
-45.00
-17.0
-15.0
-13.0
Input Pow (dB )
er m
-11.0
-9.0
-7.0
Note: Equivalent output IP3 performance
exceeds 24dBm, input IP3 is typically
≥+2dBm.
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMA219
Datasheet v3.0
S-P
ARAMETERS
(Vdd= 3.0V; Idd= 72mA):
FREQ-GHZ
1
1.245
1.49
1.735
1.98
2.225
2.47
2.715
2.96
3.205
3.45
3.695
3.94
4.185
4.43
4.675
4.92
5.165
5.41
5.655
5.9
6.145
6.39
6.635
6.88
7.125
7.37
7.615
7.86
8.105
8.35
8.595
8.84
9.085
9.33
9.575
9.82
10.065
10.31
10.555
10.8
11.045
11.29
11.535
11.78
12.025
12.27
12.515
12.76
13.005
13.25
13.495
13.74
13.985
14.23
14.475
14.72
14.965
15.21
15.455
15.7
15.945
S11MAG
0.974
0.968
0.963
0.959
0.958
0.96
0.965
0.973
0.958
0.934
0.95
0.968
0.988
1.007
1.035
1.069
0.951
0.945
1.021
1.034
1.004
0.927
0.807
0.658
0.504
0.367
0.268
0.227
0.24
0.283
0.337
0.388
0.435
0.478
0.514
0.545
0.572
0.593
0.608
0.618
0.626
0.63
0.627
0.622
0.615
0.604
0.589
0.575
0.561
0.544
0.524
0.506
0.488
0.469
0.451
0.434
0.418
0.397
0.378
0.361
0.348
0.333
S11ANG
-106.62
-125.3
-141.67
-156.2
-169.47
178.08
166.1
154.02
141.23
131.54
121.28
109.94
97.76
84.85
70.66
54.25
28.15
29.43
10.5
-9.95
-31.51
-53.66
-75.49
-95.15
-111.08
-120.38
-119.71
-109.46
-99.07
-96.28
-99.06
-105.01
-111.94
-119.7
-127.72
-135.89
-143.88
-151.64
-159.12
-166.45
-173.69
179.26
172.58
166.17
160.01
154.16
148.47
142.93
137.71
133.07
128.55
124.13
119.86
115.96
112.04
108.26
105.67
102.87
99.79
96.52
93.94
92.37
S21MAG
0.068
0.079
0.092
0.096
0.1
0.104
0.112
0.132
0.148
0.171
0.251
0.367
0.535
0.778
1.151
1.771
2.926
2.061
3.203
4.536
6.024
7.547
8.943
10.049
10.815
11.268
11.522
11.667
11.737
11.775
11.806
11.826
11.843
11.844
11.852
11.846
11.827
11.781
11.726
11.649
11.557
11.432
11.269
11.091
10.896
10.683
10.437
10.175
9.907
9.609
9.318
9.005
8.698
8.368
8.03
7.686
7.342
7.02
6.696
6.365
6.054
5.737
S21ANG
-115.04
-144.82
-165.53
168.17
145.39
123.02
99.66
73.18
45.25
31.12
16.56
0.21
-15.43
-30.42
-45.48
-62.52
-102.1
-105.45
-113.56
-131.16
-151.54
-173.34
164.5
142.79
122.24
103.33
86.07
70.26
55.61
41.94
28.96
16.67
4.87
-6.52
-17.58
-28.41
-39.01
-49.39
-59.5
-69.51
-79.38
-89.1
-98.68
-108.08
-117.3
-126.44
-135.33
-144.15
-152.79
-161.3
-169.65
-177.82
173.99
166.14
158.31
150.71
143.44
136.17
129.12
122.22
115.62
109.22
S12MAG
0
0
0.001
0.001
0
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.002
0.002
0.002
0.003
0.009
0.004
0.003
0.004
0.005
0.006
0.007
0.009
0.01
0.01
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.016
0.017
0.017
0.017
0.017
0.018
0.017
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.018
0.017
0.017
0.017
0.017
0.017
0.017
0.017
S12ANG
107.89
96.58
76.88
55.16
53.04
46.09
23.97
42.06
52.06
18.31
-4.07
3.18
-9.97
-30.48
-27.77
-49.44
-120.99
118.66
65.1
24.75
-1.95
-23.74
-45.39
-65.6
-82.43
-97.87
-113.2
-125.36
-137.61
-146.86
-157.24
-165.6
-174.09
178.62
170.72
163.57
157.72
150.1
143.61
136.33
128.78
123.33
117.93
111.68
107.41
101.82
96.04
91.31
85.97
82.16
77.5
73.7
70.16
64.24
61.86
57.54
54.93
52.45
48.74
45.51
41.29
40.04
S22MAG
0.74
0.641
0.568
0.514
0.474
0.445
0.421
0.402
0.386
0.37
0.356
0.342
0.328
0.312
0.296
0.281
0.305
0.259
0.222
0.19
0.156
0.12
0.085
0.055
0.032
0.013
0.003
0.018
0.033
0.049
0.065
0.081
0.098
0.114
0.129
0.144
0.158
0.171
0.183
0.193
0.202
0.208
0.213
0.217
0.22
0.222
0.225
0.229
0.235
0.244
0.254
0.266
0.282
0.3
0.321
0.344
0.367
0.388
0.409
0.429
0.45
0.471
S22ANG
-117.91
-135.03
-147.1
-156.86
-164.33
-170.58
-176
179.01
174.19
169.6
165.04
160.47
155.92
151.5
147.18
143.68
140.84
124.29
118.27
111.03
103.14
95.2
88.64
84.7
83.47
87.06
-101.15
-91.84
-91.39
-91.83
-92.12
-93.19
-94.77
-96.84
-99.55
-102.25
-104.77
-107.68
-110.27
-112.92
-115.51
-117.39
-119.05
-120.38
-121.13
-121.27
-120.82
-120.02
-118.85
-117.85
-116.67
-115.65
-114.8
-114.41
-114.35
-115.16
-116.62
-118.17
-120.11
-121.83
-123.8
-125.99
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMA219
Datasheet v3.0
R
ECOMMENDED
A
SSEMBLY
S
CHEMATIC
:
75µm nominal gap on
each side
Input and output thin film
substrates with 50Ω microstrip
transmission lines. Substrate
thickness 250µm or thinner is
recommended.
25µm dia. Au wire (x2) on
input and output ports, less
than 1000µm length each
Note: The supply de-coupling
capacitor (150 pF recommended
value) should be placed as close
to the MMIC as practical.
150pF
capacitor
To +V
DD
250µm Au ribbon
recommended
P
REFERRED
A
SSEMBLY
I
NSTRUCTIONS
:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
The back of the die is metallised and the
recommended mounting method is by the use
of
conductive
epoxy
following
the
manufacturer’s
recommended
curing
temperature.
For eutectic 80/20 gold/tin
solder, use a stage temperature of 280-300°C
for a maximum time of 60s. Use forming gas
(90%N2, 10% H2) for best results.
Recommended lead bond technique is
thermocompression wedge bonding with 25µm
diameter wire. The bond tool force shall be
35-38g. Bonding stage temperature shall be
230-240°C, heated tool (150-160°C) is
recommended.
Ultrasonic bonding is not
recommended.
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 0 (0-250 V)
as defined in JEDEC Standard No. 22-A114.
Further information on ESD control measures
can be found in MIL-STD-1686 and MIL-
HDBK-263.
A
PPLICATION
N
OTES
& D
ESIGN
D
ATA
:
Application Notes and design data including S-
parameters are available on request
D
ISCLAIMERS
:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
O
RDERING
I
NFORMATION
:
P
ART
N
UMBER
FMA219
H
ANDLING
P
RECAUTIONS
:
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
5
D
ESCRIPTION
Die
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website:
www.filtronic.com
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