BL
FEATURES
GALAXY ELECTRICAL
1N914,1N914A,1N914B
REVERSE VOLTAGE:
75 V
CURRENT： 75 mA
DO - 35
SMALL SIGNAL SWITCHING DIODE
◇
Glass sealed envelope. (MSD)
◇
V
RM
=100V guaranteed
◇
High reliability
MECHANICAL DATA
◇
Case: DO-35, glass case
◇
Polarity: Color band denotes cathode
◇
Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS
(Ratings at 25℃ambient temperature unless otherwise specified.）
1N914,1N914A,1N914B
Maximum DC reverse voltage
Maximum recurrent peak reverse voltage
Average forward rectified current
half wave rectification with resistive load
Forward surge current
t<1ms
t=1ms
t=1s
Power dissipation (note)
Junction temperature
Storage temperature range
UNITS
V
V
mA
A
mW
℃
℃
V
R
V
RM
I
O
I
FSM
P
tot
T
j
T
STG
75
100
75
4.0
1.0
0.5
250
175
- 65 --- + 175
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
(Ratings at 25℃ambient temperature unless otherwise specified.）
Min
Forw ard voltage @1N914,1N914A,I
F
=10mA
1N914B,I
F
=5mA
1N914B,I
F
=100mA
Leakage current
@V
R
=20V
@V
R
=75V
@V
R
=20V,T
j
=150℃
Capacitance
@ V
R
=0V,f=1MH
Z
Typ
-
-
-
-
-
-
-
-
-
-
Max
1.0
0.72
1.0
25
5
50
4
8
2.5
500
UNITS
V
nA
µA
µA
pF
ns
V
℃/W
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V
F
I
R
C
tot
t
rr
V
fr
R
θjA
-
0.62
-
-
-
-
-
-
-
-
Reverse recovery time @I
F
=10mA,I
R
=10mA,
R
L
=100Ω,measured at I
R
=1mA
Voltage rise w hen sw itching on
tested w ith 50mA pulses t
r
=20ns
Thermal resistance junction to ambient (note )
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Document Number 0268015
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN
VERSUS AMBIENT TEMPERATURE
1N914,1N914A,1N914B
FIG.2 -- FORWARD CHARACTERISTICS
mW
500
450
400
mA
10
3
10
2
P
tot
350
300
250
200
150
100
50
0
0
100
200℃
I
F
10
1N914B
1N914,1N914A
1
10
-1
10
-2
0
1
T
A
V
F
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
I
FSM
10
V=tp/T
tp
I
FSM
T=1/fp
1
n=0
0.1
0.2
0.5
T
0.1
10
-5
10
-3
10
-2
10
-1
1
10S
tp
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Document Number 0268015
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT
CIRCUIT
1N914,1N914A,1N914B
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
V
RF
=2V
2nF
5K
V
O
Ctot(V
R
)
Ctot(OV)
1.0
T
J
=25
f=1MHz
0.9
0.8
0.7
0
2
4
6
V
R
8
10V
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS
FORWARD CURRENT
nA
10
4
10
4
T
J
=25℃
f=1KHz
10
3
10
3
r
F
10
2
10
2
10
10
V
R
=20V
1
1
0
100
200℃
10
-2
10
-1
1
10
I
F
10
2
mA
Document Number 0268015
BL
GALAXY ELECTRICAL
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3.
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