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FEATURES
GALAXY ELECTRICAL
1N4150
VOLTAGE RANGE: 50 V
CURRENT: 150 m A
DO - 35
SMALL SIGNAL SWITCHING DIODE
◇
Silicon epitaxial planar diode
◇
High speed switching diode
◇
500 mW power dissipation
MECHANICAL DATA
◇
Case: DO-35,glass case
◇
Polarity: Color band denotes cathode
◇
Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
1N4150
Reverse voltage
Peak reverse voltage
Average forward rectified current V
R
=0V
Forward surge current at t=1µs
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
V
R
V
RM
I
O
I
FSM
P
tot
R
thja
T
j
T
STG
50
50
150
4.0
500
500
175
-65 --- + 175
UNITS
V
V
mA
A
mW
K/W
℃
℃
ELECTRICAL CHARACTERISTICS
MIN.
Forward voltage at I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=100mA
I
F
=200mA
Leakage current @V
R
=50V,T
J
=25℃
V
R
=50V,T
J
=150℃
Capacitance at V
R
=0V,f=1MH
Z,
V
HF
=50mV
Reverse recovery time
I
F
=I
R
=(10to100mA),i
R
=0.1×I
R
R
L
=100Ω
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MAX.
0.62
0.74
0.86
0.92
1.0
0.1
100
2.5
4.0
UNITS
0.54
0.66
V
F
0.76
0.82
0.87
I
R
C
tot
t
rr
-
-
-
-
V
µA
pF
ns
Document Number 0268022
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN
VERSUS AMBIENT TEMPERATURE
1N4150
FIG.2 -- FORWARD CHARACTERISTICS
mW
1000
900
800
mA
10
3
10
2
P
tot
700
600
500
400
300
200
100
0
0
100
200
℃
I
F
10
T
J
=25
1
10
-1
T
A
10
-2
0
0.5
V
F
1V
FIG.3 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE
nA
10
4
10
3
10
2
10
V
R
=50V
1
0
10 0
20 0℃
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Document Number 0268022
BL
GALAXY ELECTRICAL
2.
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