BL
GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
1N4151
REVERSE VOLTAGE
: 50 V
CURRENT: 0.15 A
DO-35(GLASS)
MECHANICAL DATA
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
２５
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
1N4151
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resistive load
@ T
A
=
２５
and f 50Hz
Forw ard surge current @ t<1s and T
J
=
２５
Pow er dissipation
@ T
A
=
２５
Junction temperature
Storage temperature range
UNITS
V
V
mA
mA
mW
V
R
V
RM
I
AV
I
FSM
P
tot
T
J
T
STG
MIN
-
-
-
-
75.0
-
50.0
75.0
150
1)
500.0
500
1)
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ I
F
=10mA
Leakage current
@ V
R
=50V
@ V
R
=20V T
J
=150
Capacitance
@ V
F
=V
R
=0V
Reverse breakdow n voltage
tested w ith 5μA pulses
Reverse recovery time
from I
F
=10mA to I
R
=10mA to I
R
=1mA
from I
F
=10mA to I
R
=1mA, V
R
=6V. R
L
=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V
RF
=2V
V
F
I
R
I
R
C
J
V
(BR)R
t
rr
R
θJA
ηv
TYP
-
-
-
-
-
-
MAX
1.0
50.0
50.0
2
-
4
2
350
1)
-
UNITS
V
nA
μA
pF
V
ns
ns
K/W
-
0.45
-
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
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Document Number 0268002
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN
VERSUS AMBIENT TEMPERATURE
1N4151
FIG.2 -- FORWARD CHARACTERISTICS
mW
1000
900
800
mA
10
3
10
2
P
tot
700
600
500
400
300
200
100
0
0
100
200
℃
I
F
10
T
J
=100
T
J
=25
1
10
-1
T
A
10
-2
0
1
V
F
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
I
FRM
10
V=tp/T
I
FRM
T=1/fp
tp
n=0
0.1
1
T
0.2
0.5
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10S
tp
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Document Number 0268002
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT
CIRCUIT
1N4151
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
V
RF
=2V
2nF
5K
V
O
Ctot(V
R
)
Ctot(OV)
1.0
T
J
=25
f=1MHz
0.9
0.8
0.7
0
2
4
6
8
1 0V
V
R
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS
FORWARD CURRENT
nA
10
4
10
4
T
J
=25℃
f=1MHz
10
3
10
3
r
10
2
F
10
2
10
10
V
R
=50V
1
0
10 0
20 0℃
1
10
-2
10
-1
1
10
I
F
10
2
mA
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Document Number 0268002
BL
GALAXY ELECTRICAL
3.
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