BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
USF21 --- USF24
VOLTAGE RANGE: 50 --- 200 V
CURRENT: 2.0 A
SUPER FAST RECTIFIER
DO - 15
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
USF21
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
USF22
100
70
100
2.0
USF23
150
105
150
USF24
200
140
200
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
75.0
A
Maximum instantaneous forw ard voltage
@ 2.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
10.0
350.0
20
15
40
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264029
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
t
rr
50
N 1.
10
N 1.
USF21 --- USF24
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
+0.5A
0
PULSE
GENERATOR
(NOTE2)
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
D.U.T.
(+)
25VDC
(approx)
(-)
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0
0 .2
0 .4
0 .6
0 .8
1 .0 1 .2
1 .4
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
3
z
INSTANTANEOUS FORWARD
CURRENT, AMPERES
T
J
=25
P u l s e W id t h = 3 0 0
µ
s
2
1
S in g le P h a se
H a lf W a ve 6 0 H Z
R e s is tive o r
In d u c tiv e L o a d
0 .3 7 5 "(9 .5 m m )L e a d L e n g th
0
0
25
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
PEAK FORWARD SURGE
CURRENT, AMPERES
100
60
40
20
10
6
4
2
1
0.1 0.2
T
J
=25
f=1.0MH
Z
90
75
60
45
30
15
0
1
5
10
5
0
100
8.3ms Single Half
Sine-Wave
0.4
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
CURRENT, MICROAMPERES
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE
100
T
J
= 1 5 0
10
1
T
J
= 1 0 0
.1
T
J
= 2 5
.0 1
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,
www.galaxycn.com
Document Number 0264029
BL
GALAXY ELECTRICAL
2.
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
