NBB-502Cas-
cadable
Broadband
GaAs MMIC
Amplifier DC to
4GHz
NBB-502
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
RoHS Compliant & Pb-Free Product
Package Style: MPGA, Bowtie, 3x3, Ceramic
3
Features
Reliable, Low-Cost HBT
Design
19.0dB Gain, +13.0dBm
P1dB@2GHz
High P1dB of
+14.0dBm@6.0GHz
Single Power Supply Opera-
tion
50Ω I/O Matched for High
Freq. Use
Pin 1
Indicator
RF OUT
8
Ground
7
6
5
9
4
RF IN
1
2
3
Ground
GENERAL PURPOSE
AMPLIFIERS (LNAs,
Applications
Narrow and Broadband Com-
mercial and Military Radio
Designs
Linear and Saturated Amplifi-
ers
Gain Stage or Driver Amplifi-
ers for MWRadio/Optical
Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cel-
lular/DWDM)
Functional Block Diagram
Product Description
The NBB-502 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and micro-
wave amplification needs. This 50Ω gain block is based on a reliable HBT
proprietary MMIC design, providing unsurpassed performance for small-
signal applications. Designed with an external bias resistor, the NBB-502
provides flexibility and stability. The NBB-502 is packaged in a low-cost,
surface-mount ceramic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements. It is available in either 1,000 or 3,000
piece-per-reel quantities.
Ordering Information
NBB-502
NBB-502
NBB-502-T1
NBB-502-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
Tape & Reel, 1000 Pieces
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A5 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-13
NBB-502
Absolute Maximum Ratings
Parameter
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Caution! ESD sensitive device.
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter
Overall
Small Signal Power Gain, S21
Min.
19.0
16.0
Specification
Typ.
20.5
19.0
17.0
±0.8
1.55:1
1.50:1
1.55:1
Max.
Unit
dB
dB
dB
dB
Condition
V
D
=+3.9V, I
CC
=35mA, Z
0
=50Ω, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=1.0GHz to 3.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
Gain Flatness, G
F
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δG
T
/δT
3.6
4.2
13.0
14.0
4.0
+23.0
-17.0
3.9
-0.0015
4.2
GHz
dBm
dBm
dB
dBm
dB
V
dB/°C
BW3 (3dB)
f=2.0GHz
f=6.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 10.0GHz
MTTF versus Temperature
@ I
CC
=35mA
Case Temperature
Junction Temperature
MTTF
85
109.4
>1,000,000
179
°C
°C
hours
°C/W
Thermal Resistance
θ
JC
J
T
–
T
CASE
--------------------------
=
θ
JC
( °C ⁄
Watt
)
-
V
D
⋅
I
CC
3-14
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A5 DS060124
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