Si4704DY
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
V
DS2
(V)
20
FEATURES
I
D
(A)
6.5
5.5
r
DS(on)
(W)
0.017 @ V
GS2
= 4.5 V
0.024 @ V
GS2
= 2.5 V
D
TrenchFETr Power MOSFET
D
LITTLE FOOT
Plust
Level Shifrt
APPLICATIONS
D
Low Voltage BUS/Load Switching
5, 6, 7
3, 4
Q2
8
SO-8
S
1
V
ON/OFF
S
2
S
2
1
2
3
4
Top View
Ordering Information: Si4704DY
Si4704DY-T1 (with Tape and Reel)
8
7
6
5
V
HV
V
IN
V
IN
V
IN
V
ON/OFF
V
HV
V
IN
S
2
2
Q1
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Input Voltage
Q2 Gate-Drive Voltage Referenced to S1 or S2
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
W)
Continuous
a
Pulsed
b
Symbol
V
IN
V
HV
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
20
20
8
6.5
"30
−1.15
1.25
−55
to 150
3
Unit
V
A
W
_C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t = steady state)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJC
Typical
80
25
Maximum
100
30
Unit
_C/W
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
FL
V
SD
V
IN
= 20 V, V
ON/OFF
= 0 V, V
HV
= 0 V
I
S
=
−1.15
A
0.65
1
1
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
ON Characteristics
On-Resistance (Q2)
On-State (Q2) Drain-Current
r
DS(on)
I
D(on)
V
ON/OFF
= 0 V, I
D
= 7 A, V
HV
= 4.5 V, V
S2
= 0 V
V
ON/OFF
= 0 V, I
D
= 6 A, V
HV
= 2.5 V, V
S2
= 0 V
V
IN-OUT
v
0.1 V, V
IN
= 5 V, V
ON/OFF
= 0 V, V
HV
= 4.5 V
20
0.014
0.0195
0.017
0.024
W
A
Notes
a. Surface Mounted on FR4 Board.
b. Pulse test: pulse width
v300
ms,
duty cycle
v2%.
Document Number: 71929
S-32422—Rev. B, 24-Nov-03
www.vishay.com
1
Si4704DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
(V)
(V)
0.6
T
J
= 125_C
0.4
T
J
= 25_C
0.1
0.0
0
6
12
I
D
−
(A)
18
24
30
0.2
0.3
0.2
T
J
= 125_C
T
J
= 25_C
V
ON/OFF
= 0 V
V
HV
= 4.5 V
V
S2
= 0 V
V
DS
vs. I
D
1.0
V
ON/OFF
= 0 V
V
HV
= 2.5 V
V
S2
= 0 V
V
DS
vs. I
D
0.8
V
DS
V
DS
0.0
0
6
12
18
I
D
−
(A)
24
30
0.10
V
DS
vs. V
HV
0.5
V
DS
vs. V
HV
0.08
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
(V)
0.4
V
ON/OFF
= 0 V
I
DS
= 5 A
V
S2
= 0 V
V
DS
(V)
0.06
0.3
V
DS
T
J
= 125_C
0.04
0.2
T
J
= 125_C
0.1
0.02
T
J
= 25_C
0
2
4
6
V
HV
−
(V)
8
10
0.00
0.0
0
2
4
T
J
= 25_C
6
V
HV
−
(V)
8
10
0.10
r
DS
vs. V
HV
Normalized On-Resistance vs. Junction Temperature
1.8
1.6
1.4
1.2
V
HV
= 4.5 V
1.0
0.8
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
r
SS(on)
−
On-Resistance (
W
)
0.06
0.04
T
J
= 125_C
0.02
T
J
= 25_C
0.00
0
2
4
6
V
HV
−
(V)
8
10
r
DS(on)
−
On-Resistance (
W)
(Normalized)
0.08
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
0.6
−50
−25
0
25
50
75
100 125
T
J
−
Junction Temperature (_C)
150
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Document Number: 71929
S-32422—Rev. B, 24-Nov-03
Si4704DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
t
d(on)
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
Time (
mS)
V
IN
= 5 V
V
IN
= 3.3 V
12
30
50
t
rise
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
24
40
Time (
mS)
18
30
V
IN
= 3.3 V
20
V
IN
= 5 V
6
10
0
10
30
50
70
R
G
(kW)
90
110
0
10
30
50
70
R
G
(kW)
90
110
0.5
t
d(off)
Variation with R
G
/V
IN
200
t
f
Variation with R
G
/V
IN
0.4
V
IN
= 3.3 V
160
V
IN
= 5 V
Time (
mS)
0.3
V
IN
= 5 V
Time (
mS)
120
V
IN
= 3.3 V
80
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
0.2
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
0.1
40
0.0
10
30
50
70
R
G
(kW)
90
110
0
10
30
50
70
R
G
(kW)
90
110
100
Limited
by r
DS(on)
10
I
D
−
Drain Current (A)
Safe Operating Area, Junction-to-Case
1 ms
1
10 ms
100 ms
1s
0.1
T
C
= 25_C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Document Number: 71929
S-32422—Rev. B, 24-Nov-03
www.vishay.com
3
Si4704DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
2
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL APPLICATION CIRCUIT
5V
5, 6, 7
V
IN
8
V
HV
2
V
ON/OFF
1
S
1
Q1
Q2
3, 4
S
2
R
L
1.5-V BUS
NOTE: Voltage difference between pull-up voltage, 5 V, and BUS voltage, 1.5 V, should be greater than 2.5 V.
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Document Number: 71929
S-32422—Rev. B, 24-Nov-03
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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